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Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

T. Kitatani ,
M. Kondow ,
K. Nakahara ,
K. Uomi  and
T. Tanaka
T. Kitatani
Affiliation:
RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji-shi, Tokyo, 185–8601, Japan
M. Kondow
Affiliation:
RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji-shi, Tokyo, 185–8601, Japan
K. Nakahara
Affiliation:
RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji-shi, Tokyo, 185–8601, Japan
K. Uomi
Affiliation:
Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji, Tokyo, 185–8601, Japan Currently with: Telecommunications System Group, Hitachi, Ltd. 216 Totsuka. Yokohama. Kanagawa, 244–8567, Japan
T. Tanaka
Affiliation:
Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji, Tokyo, 185–8601, Japan
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Abstract

Through optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 597: Symposium PP – Thin Films for Optical Waveguide Devices & Materials … , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

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References

1. M. Kondow. Uomi, K.. Niwa, A., Kitatani, T., Watahiki, S. and Yazawa, Y., Jpn. J. Appl. Phys. 35, 1273(1996).Google Scholar
2. Kondow, M., Nakatsuka, S., Kitatani, T., Yazawa, Y. and Okai, M., Electro. Lett. 32, 2244(1996)Google Scholar
3. Nakahara, K., Kondow, M., Kitatani, T., Larson, M. C. and Uomi, K.. Photonic Technol. Lett. 10, 487(1998).Google Scholar
4. Kitatani, T., Kondow, M., Nakahara, K., Larson, M. C. and Uomi, K.. Optic. Rev. Lett. 5, 69(1998)Google Scholar
5. Sato, S.. Osawa, Y. and Saitoh, T., Jpn. J. Appl. Phys. 36, 2671(1997).Google Scholar
6. Sato, S. and Satoh, S.. Electro. lett. 35. 1251 (1999).Google Scholar
7. Pan, Z., Miyamoto, T., Schlenker, D.. Koyama, F. and Iga, K., Jpn. J. Appl. Phys. 38 1012 (1999).Google Scholar
8. Moto, A., Tanaka, S.. Ikoma, N.. Tanabe, T., Takagishi, S., Takahashi, M. and Katsuvama, T., Jpn. J. Appl. Phys. 38, 1015(1999).Google Scholar
9. A. Ougazzaden. E. V. K. Rao. Sermage, B.. Leprince, L. and Gauneaut, M., Jpn. J. Appl. Phys. 38. 1019(1999).Google Scholar
10. Kitatani, T.. Nakahara, K., Kondow, M.. Uomi, K. and Tanaka, T.. to be published in I. Cryst. Growth.Google Scholar
11. Higashi, T., Yamamoto, T. and Ogita, S.. IEEE LEOS '96, Boston. MA3 (1996)Google Scholar