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Improved CdZnTe detectors grown by vertical Bridgman process

Published online by Cambridge University Press:  10 February 2011

K. G. Lynn ,
M. Weber ,
H. L. Glass ,
J. P. Flint  and
Cs. Szeles
K. G. Lynn
Affiliation:
Dept. of Phyiscs, Washington State University, Pullman, WA 99164-2814
M. Weber
Affiliation:
Dept. of Phyiscs, Washington State University, Pullman, WA 99164-2814
H. L. Glass
Affiliation:
Johnson Matthey Electronics, Spokane, WA 99216
J. P. Flint
Affiliation:
Johnson Matthey Electronics, Spokane, WA 99216
Cs. Szeles
Affiliation:
eV Products division of II–VI, IInc., Saxonburg, PA 16056
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Abstract

The γ ray (57Co) and a particle (241Am) detector response of Cd1−xZnxTe crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Postgrowth processing was utilized to produce a high-resistivity material with improved chargecollection properties. Samples of various Zn concentrations were investigated by I–V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the lowenergy tailing of the γ-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV γ-photon line in crystals with x=0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from 57Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 319
Copyright
Copyright © Materials Research Society 1998

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