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Improved Amorphous Silicon Solar Cells Using RPCVD

Published online by Cambridge University Press:  01 January 1993

Kyu Chang Park
Affiliation:
Department of Physics and Research Institute of Basic Sciences,Kyung Hee University, Dongdaemoon-ku, Seoul 130-701,Korea
Tae Gon Kim
Affiliation:
Department of Physics and Research Institute of Basic Sciences,Kyung Hee University, Dongdaemoon-ku, Seoul 130-701,Korea
Sung Ki Kim
Affiliation:
Department of Physics and Research Institute of Basic Sciences,Kyung Hee University, Dongdaemoon-ku, Seoul 130-701,Korea
Sung Chul Kim
Affiliation:
At Anyang Research Lab. ,GoldStar Co. ,Anyang-shi 430-080,Korea
Myung Hak Hwang
Affiliation:
Department of Physics and Research Institute of Basic Sciences,Kyung Hee University, Dongdaemoon-ku, Seoul 130-701,Korea
Jung Mok Jun
Affiliation:
Department of Physics and Research Institute of Basic Sciences,Kyung Hee University, Dongdaemoon-ku, Seoul 130-701,Korea
Jin Jang
Affiliation:
Department of Physics and Research Institute of Basic Sciences,Kyung Hee University, Dongdaemoon-ku, Seoul 130-701,Korea
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Abstract

We have studied the depositions of amorphous silicon, silicon carbon alloy, doped microcrystalline silicon in order to apply these films as the component materials for the p-i-n and double stacked solar cells. We have obtained low band gap a-Si:H by decreasing the deposition rate under the proper preparation conditions and highly conductive, thin microcrystalline Si and SiC layers. We have developed a stable a-Si/a-Si double stacked solar cell with a conversion efficiency of ∼ % using narrow band gap a-Si:H as a i-layer of bottom cell.The performance of this cell does not degrade until 100 hrs illumination under 350 mW/cm2.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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