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Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

Published online by Cambridge University Press:  15 February 2011

Yasutaka Uchida  and
Masakiyo Matsumura
Yasutaka Uchida
Affiliation:
Department of Electronics and Information Sciences, Nishi–Tokyo University, Uenohara–machi, Kitatsuru–gun, Yamanashi 409–01, JAPAN.
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, Oh–okayama, Meguro–ku, Tokyo 152, JAPAN.
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Abstract

XPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 105
Copyright
Copyright © Materials Research Society 1994

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References

[1] Takabatake, M., Ohwada, J., Ono, Y. A., Mimura, A. and Konishi, N., IEEE Trans. Electron Devices ED–38 (1991) 1303.Google Scholar
[2] Kaneko, T., Hosokawa, Y., Tadauchi, M., Kita, Y. and Andoh, H., IEEE Trans. Electron Devices ED–38 (1991) 1086.Google Scholar
[3] Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., IEEE Trans. Electron Devices ED–36 (1989) 1929.Google Scholar
[4] Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S. and Hotta, K., IEEE Trans. Electron Devices ED–36 (1989) 2868.Google Scholar
[5] Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Tsuda, S. and Nakano, S., Extended Abstract of Int'l. Electron Devices Meet. 1991 (1991) 563.Google Scholar
[6] Zhang, H., Kusumoto, N., Inushima, T. and Yamazaki, S., IEEE Electron Device Lett. EDL–13 (1992) 297.Google Scholar
[7] Shimizu, K., Sugiura, O. and Matsumura, M., IEEE Trans. Electron Devices ED–40 (1993) 112.Google Scholar
[8] Shimizu, K., Nakamura, K., Higashimoto, M., Sugiura, O. and Matsumura, M., Jpn. J. Appl. Phys. 32 (1993) 452.Google Scholar
[9] Kobayashi, I., Ogawa, T. and Hotta, S., Jpn. J. Appl. Phys. 31 (1992) 336.Google Scholar
[10] Ahn, B. C., Kanoh, H., Sugiura, O. and Matsumura, M., Conf. Record of the 1991 Int'l. Display Research Conference, (1991) 85.Google Scholar