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Importance of Surface Preparation in Direct Ion Beam Deposition(Ibd)

Published online by Cambridge University Press:  25 February 2011

Kiyoshi Miyake
Kiyoshi Miyake*
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., 2046 Kuji-cho, Hitachi-shi, Ibaraki 319-12, Japan
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Abstract

Fundamental aspects of direct ion beam deposition (IBD) are discussed, stressing surface preparation and contamination problems. Residual gas contamination, ion beam induced metal contamination, and presence of surface native oxide before deposition are shown to be the major factors hindering low temperature epitaxial growth in IBD. A low energy hydrogen ion bombardment is demonstrated as an effective surface preparation method to remove surface native oxide in the case of silicon deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 3
Copyright
Copyright © Materials Research Society 1990

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References

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