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Implantation and Activation of High Concentrations of Boron and Phosphorus in Germanium

Published online by Cambridge University Press:  01 February 2011

Yong Seok Suh ,
Malcolm S. Carroll ,
Roland A. Levy ,
Gabriele Bisognin ,
Davide De Salvador  and
M. Alper Sahiner
Yong Seok Suh
Affiliation:
[email protected], New Jersey Institute of Technology, Physics Department, University Heights, Newark, New Jersey, 07102, United States, 973-596-3680, 973-596-8369
Malcolm S. Carroll
Affiliation:
[email protected], Sandia National Laboratories, United States
Roland A. Levy
Affiliation:
[email protected], New Jersey Institute of Technology, Physics Department, United States
Gabriele Bisognin
Affiliation:
[email protected], Universita di Padova, MATIS-INFM and Dipartimento di Fisica, Italy
Davide De Salvador
Affiliation:
[email protected], Universita di Padova, MATIS-INFM and Dipartimento di Fisica, Italy
M. Alper Sahiner
Affiliation:
[email protected], Seton Hall University, Department of Physics, United States
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Abstract

The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm−3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., > 2×1020 cm−3), even immediately after implant; while in contrast, phosphorus is limited to ∼ 1–2×1019 cm−3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

Keywords

diffusionion-implantationGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE07-20
Copyright
Copyright © Materials Research Society 2006

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References

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