Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:44:29.892Z Has data issue: false hasContentIssue false

Impedance spectroscopy study of solid-state dye-sensitized solar cells with varying Spiro-OMeTAD concentration

Published online by Cambridge University Press:  31 January 2011

Márcio S Góes
Affiliation:
[email protected], Universidade Estadual Paulista, Araraquara, Brazil
Francisco Fabregat-Santiago
Affiliation:
[email protected], Universitat Jaume I, Castelló, Spain
Paulo R Bueno
Affiliation:
[email protected], Universidade Estadual Paulista, Araraquara, Brazil
Juan Bisquert
Affiliation:
Get access

Abstract

This work reports on the changes of solid-state cells dye-sensitized solar cells performance with the variation of concentration of spiro-OMeTAD between 5% and 25% in the fabrication of the cell. The changes in charge recombination and capacitance correlate with the improvement of current-potential characteristics a increasing spiro-OMeTAD content, which is explained by reduction of transport resistance for hole transport, the increase of charge separation in the dye molecules, and importantly, with the increase of the β-factor in the recombination resistance, that causes a reduction of the diode ideality factor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Snaith, H.J. and Schmidt-Mende, L., Adv. Mat. 19 (2007) 3187.Google Scholar
[2] Snaith, H.J. Humphry-Baker, R., Chen, P. Cesar, I. Zakeeruddin, S.M. and Grätzel, M., Nanotechnol. 19 (2008) 424003.Google Scholar
[3] Fabregat-Santiago, F., Bisquert, J. Cevey, L. Chen, P. Wang, M. Zakeeruddin, S.M. and Grätzel, M., J. Am. Chem. Soc. 131 (2009) 558.Google Scholar
[4] Wang, M. Chen, P. Humphry-Baker, R., Zakeeruddin, S.M. and Grätzel, M., ChemPhysChem 10 (2009) 290.Google Scholar
[5] Fabregat-Santiago, F., Bisquert, J. Palomares, E. Otero, L. Kuang, D. Zakeeruddin, S.M. and Grätzel, M., J. Phys. Chem. C 111 (2007) 6550.Google Scholar
[6] Wang, Q. Ito, S. Grätzel, M., Fabregat-Santiago, F., Mora-Seró, I., Bisquert, J. Bessho, T. and Imai, H. J. Phys. Chem. B 110 (2006) 19406.Google Scholar
[7] Li, T.C. Góes, M.S., Fabregat-Santiago, F., Bisquert, J. Bueno, P.R. Prasittichaia, C. Hupp, J.T. and Marks, T.J. J. Phys. Chem. C 113 (2009) 18385.Google Scholar
[8] Bisquert, J. Fabregat-Santiago, F., Mora-Seró, I., Garcia-Belmonte, G. and Giménez, S., J. Phys. Chem. C 113 (2009) 17278.Google Scholar