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Impacts of Temperature and Moisture on the Resistive Switching Characteristics of a Cu-Ta2O5-Based Atomic Switch
Published online by Cambridge University Press: 17 May 2012
Abstract
The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.
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- MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e06-06
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- Copyright © Materials Research Society 2012