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Impact of Various In Situ Preoxidation Process Perturbations on Gate Oxide Quality

Published online by Cambridge University Press:  22 February 2011

P. K. Roy ,
M. Weinhoffer ,
R. L. Dyas  and
S. Meester
P. K. Roy
Affiliation:
AT&T Bell Labs, 555 Union Boulevard, Allentown, PA 18103
M. Weinhoffer
Affiliation:
AT&T Bell Labs, 555 Union Boulevard, Allentown, PA 18103
R. L. Dyas
Affiliation:
AT&T Bell Labs, 555 Union Boulevard, Allentown, PA 18103
S. Meester
Affiliation:
AT&T Bell Labs, 555 Union Boulevard, Allentown, PA 18103
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Abstract

This work describes an orthogonal array (OA8) designed experiment involving several insitu process perturbations during oxidation to develop a 90 Å gate oxide for 0.5μm CMOS technology. The biggest impactors were (i) the insitu preoxidation anneal at oxidation temperature, Tox, (ii) 90% N2 dilution of the ambient during ramp-up, and (iii) lowering the Tox to 850°C. Significant improvements in leakage, breakdown, and wear-out characteristics of the oxide are probably due to the reduction of poor quality ramp oxide grown by 90% N2 dilution and improved Si/SiO2 interfacial substructure attained by the insitu preoxidation anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 25
Copyright
Copyright © Materials Research Society 1994

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References

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