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Impact of Silicon Wafer Material on Dislocation Generation in Local Oxidation

Published online by Cambridge University Press:  10 February 2011

I. V. Peidous ,
R. Sundaresan ,
E. Quek ,
Y. K. Leung  and
M. Beh
I. V. Peidous
Affiliation:
R&D Department, Chartered Semiconductor Mfg., Singapore 738406, [email protected]
R. Sundaresan
Affiliation:
R&D Department, Chartered Semiconductor Mfg., Singapore 738406, [email protected]
E. Quek
Affiliation:
R&D Department, Chartered Semiconductor Mfg., Singapore 738406, [email protected]
Y. K. Leung
Affiliation:
R&D Department, Chartered Semiconductor Mfg., Singapore 738406, [email protected]
M. Beh
Affiliation:
R&D Department, Chartered Semiconductor Mfg., Singapore 738406, [email protected]
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Abstract

Crystalline quality of locally oxidized silicon wafers has been studied. Wafers from different supply sources were found to be differently susceptible to stress-induced dislocation generation, although they had been produced to the same specification. On the basis of the analysis of a depth distribution of the dislocations, critical resolved shear stress of dislocation movement in the bulk areas of the wafers was determined. It varied from about 1.65 to 5.12 MPa and correlated positively to the surface defect density. The results show that uncontrollable variations of bulk silicon properties may significantly influence the stress-induced defect nucleation on the surface of wafers during processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 125
Copyright
Copyright © Materials Research Society 1998

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References

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