Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:54:09.375Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Patterned Layers on Temperature Non-Uniformity during Rapid Thermal Processing for VLSI-Applications

Published online by Cambridge University Press:  25 February 2011

P. Vandenabeele ,
K. Maex  and
R. De Keersmaecker
P. Vandenabeele
Affiliation:
Interuniversity Micro-electronics Center (IMEC v.z.w.)Kapeldreef 75, 3030 Leuven, Belgium
K. Maex
Affiliation:
Interuniversity Micro-electronics Center (IMEC v.z.w.)Kapeldreef 75, 3030 Leuven, Belgium
R. De Keersmaecker
Affiliation:
Interuniversity Micro-electronics Center (IMEC v.z.w.)Kapeldreef 75, 3030 Leuven, Belgium
Get access

Abstract

The influence of patterned oxide layers on temperature non-uniformity during RTP is studied. It is shown that large temperature non-uniformities (up to 80 °C) can occur during RTP as a consequence of large scale patterns of thick oxides. The dependence of oxide thickness and pattern geometry on temperature non-uniformity over a wafer is studied. A set of simulation programs is developed to calculate the optical characteristics of a wafer inside a chamber and to calculate the time dependent temperature non-uniformities on patterned wafers. The calculated results agree very well with the experimental results. The simulation program was used to define the optimal optical conditions for RTP systems for minimal temperature non-uniformity due to patterned overlayers on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 149
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Maex, K., Keersmaecker, R. De, Claeys, C., Hellemont, J. Van and Alkemade, P.F.A. in the Proc. of the 5th Int'l Symp. on silicon materials science and technology, (Boston, 4-9 May 1986), p. 346.Google Scholar
2. hove, L. Van den, Wolters, R., Maex, K., Keersmaecker, R. De and Declerck, G., J. Vac. Sci. Technol. B4, 1358 1986 Google Scholar
3. Sedgwick, T.O. in Rapid Thermal Processing of Electronic Materials, edited by Wilson, S.R., Powell, R. and Davies, D.E. (Mater. Res. Soc. Proc. 92, 1987) p. 3.CrossRefGoogle Scholar
4. Probst, V., Lippens, P., hove, L. Van den, Maex, K., Schaber, H. and Keersmaecker, R. De in Solid State Devices, edited by Soncini, G. and Calzolari, P.U. (1988), p. 397.Google Scholar
5. Nulman, J. in Silicon Nitride and Silicon Dioxide Thin Insulating Films, ECS Proc. 87–10, p. 325.Google Scholar
6. Moslehi, M.M., Shatas, S.C. and Saraswat, K.C., Appl. Phys. Lett. 41, 1353 1985.CrossRefGoogle Scholar
7. Chan, N. Tung and Caratini, Y., Electronics Letters 22, 694 1986.Google Scholar
8. Mercier, J.S., Solid State Technology 20, 85 1985 Google Scholar
9. Gigante, J.R., Geneczko, J.M. and Ghoshtagore, R.N. in Reduced Temp. Processing for VLSI, ECS Proc. 86–5, p. 160.Google Scholar
10. Hill, C. and Jones, S., to be published in Proc. of the ASI-NATO Summer School on “Reduced Thermal Processing for ULSI”, Boca Raton, Florida (20 June-1 July 1988).Google Scholar
11. Lord, H.A., IEEE Transactions on Semiconductor Manufacturing, 1, 105 1988 CrossRefGoogle Scholar
12. Chan, N. Tung, Caratini, Y., D'Anterroches, C. and Buevoz, J.L., Appl. Phys. A 47, 237 1988 Google Scholar
13. Bentini, G., Correra, L. and Donolato, C., J. Appl. Phys. 56, 2922 1984 Google Scholar
14. Blake, J., Gelpey, J.C., Moquin, J.F., Schlueter, J. and Capodilupo, R. in Rapid Thermal Processing of Electronic Materials, edited by Wilson, S. R., Powell, R. and Davies, D. E. (Mat. Res. Soc. Proc. 92, 1987) p. 265 Google Scholar
15. Gasner, J.T., ECS extended abstracts 88–1, Abstr. 86.Google Scholar
16. Hodul, D. and Metha, S., Nucl. Instr. and Meth. B37, 818 1989.Google Scholar
17. Kakoschke, R., Nucl. Instr. and Meth. B37, 753 1989.CrossRefGoogle Scholar
18. Shih, T.-J. and Carter, R.L., IEEE Transactions on Electron. Devices 36, 19 1989 CrossRefGoogle Scholar
19. Gelpey, J.C., Stump, P.O. and Smith, J.W. in Rapid Thermal Processing, edited by Sedgwick, T. O., Seidel, T. E., Tsaur, B.-Y. (Mat. Res. Soc. 52, 1986), p. 199.Google Scholar
20. Gat, A. and Shatas, S., Introduction to Heatpulse Technologies, (A. G. Associates, Sunnyvale, CA, 1982).Google Scholar
21. Pettibone, D.W., Suarez, J.R. and Gat, A. in Rapid Thermal Processing, edited by Sedgwick, T. O., Seidel, T. E., Tsaur, B. (Mat. Res. Soc. Proc. 52, 1986), p. 209.Google Scholar
22. Colavito, D.B. and Trimble, L.E., J. Electrochem. Soc. 134, 1211 1987 CrossRefGoogle Scholar
23. Yang, F.K., Pien, S.J., Kwor, R. and Berry, W., ECS extended abstracts 89–1, Abstr. 249.Google Scholar
24. Merli, P.G., Optik 56, 205 1980.Google Scholar
25. Vandenabeele, P. and Maex, K., to be published.Google Scholar
26. Patent pending, Benelux 8900003.Google Scholar