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Impact of Low-Temperature Anneals of Electroplated Copper Films on Copper CMP Removal Rates

Published online by Cambridge University Press:  10 February 2011

Konstantin Smekalin  and
Qing-Tang Jiang
Konstantin Smekalin
Affiliation:
Sematech Inc., 2706 Montoplis Dr., Austin, TX 78741, and National Semiconductor Inc.,2900 Semiconductor Dr., Santa Clara, CA 95052.
Qing-Tang Jiang
Affiliation:
Sematech Inc., 2706 Montoplis Dr., Austin, TX 78741, and National Semiconductor Inc.,2900 Semiconductor Dr., Santa Clara, CA 95052.
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Abstract

CMP removal rate (RR) of electrodeposited Cu film was found to increase by 35% over time after plating. The RR increase was attributed to Cu film hardness reduction of 43% and grain growth from the initial 0.1urn at as-deposit to lum at the final stage at room temperature. The removal rate increase will translate to variations in manufacturing environment and are therefore unacceptable. It was found that annealing at ∼100C for 5 minutes in inert gas will stabilize Cu films and provide consistent CMP removal rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 143
Copyright
Copyright © Materials Research Society 2000

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References

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