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Impact of Low k Dielectrics on Electromigration Reliability for Cu Interconnects

Published online by Cambridge University Press:  01 February 2011

Paul S. Ho ,
Ki-Don Lee ,
Ennis T. Ogawa ,
Sean Yoon  and
Xia Lu
Paul S. Ho
Affiliation:
Laboratory for Interconnect and Packaging, University of Texas at Austin, Austin, TX 78712-1063
Ki-Don Lee
Affiliation:
Laboratory for Interconnect and Packaging, University of Texas at Austin, Austin, TX 78712-1063
Ennis T. Ogawa
Affiliation:
Silicon Technology Development, Texas Instruments, Inc., MS 3737, Dallas TX 75243
Sean Yoon
Affiliation:
Laboratory for Interconnect and Packaging, University of Texas at Austin, Austin, TX 78712-1063
Xia Lu
Affiliation:
Laboratory for Interconnect and Packaging, University of Texas at Austin, Austin, TX 78712-1063
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Abstract

Multi-link statistical test structures were used to study the effect of low k dielectrics on EM reliability of Cu interconnects. Experiments were performed on dual-damascene Cu interconnects integrated with oxide, CVD low k, porous MSQ, and organic polymer ILD. The EM activation energy for Cu structures was found to be between 0.8 and 1.0 eV, indicating mass transport is dominated by diffusion at the Cu/SiNx cap-layer interface, independent of ILD. Compared with oxide, the decrease in lifetime and (jL)c observed for low-k structures can be attributed to less dielectric confinement in the low k structures. An effective modulus B obtained by finite element analysis was used to account for the dielectric confinement effect on EM. For all the ILDs studied, (jL)c showed no temperature dependence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E1.6
Copyright
Copyright © Materials Research Society 2003

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