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Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer
Published online by Cambridge University Press: 01 February 2011
Abstract
The effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.
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- Copyright © Materials Research Society 2005