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Impact of a-Si:H structural properties on the annealing behavior of a-Si:H/c-Si heterostructures used as precursors for high-efficiency solar cells

Published online by Cambridge University Press:  01 February 2011

Tim Ferdinand Schulze ,
Hannes Ner Beushausen ,
Caspar Leendertz ,
Anja Dobrich ,
Thomas Hannappel ,
Lars Korte  and
Bernd Rech
Tim Ferdinand Schulze
Affiliation:
[email protected], Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Berlin, Germany
Hannes Ner Beushausen
Affiliation:
[email protected], Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Berlin, Berlin, Germany
Caspar Leendertz
Affiliation:
[email protected], Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Berlin, Germany
Anja Dobrich
Affiliation:
[email protected], Helmholtz-Zentrum Berlin, Materials for Photovoltaics, Berlin, Germany
Thomas Hannappel
Affiliation:
[email protected], Helmholtz-Zentrum Berlin, Materials for Photovoltaics, Berlin, Berlin, Germany
Lars Korte
Affiliation:
[email protected], Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Berlin, Germany
Bernd Rech
Affiliation:
[email protected], Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Berlin, Berlin, Germany
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Abstract

We analyze the dependence of the interface defect density Dit in amorphous/crystalline (a-Si:H/c-Si) heterostructures on the microscopic properties of the ultrathin (10nm) undoped a-Si:H films. It is shown that the hydrogen bonding configuration, probed by infrared spectroscopy, determines the a-Si:H network disorder, which in turn governs the annealing behavior of these structures upon a short thermal treatment at moderate temperatures (T ≤ 200°C). While the as-deposited Dit seems to be determined by the local structure at the interface, the final state of the annealed samples is determined by the bulk a-Si:H network strain as reflected in the valence band tail slope. Thus it appears valid to treat the equilibrated a-Si:H/c-Si interface as a 2D-layer that has the projected defect properties of the 3D a-Si:H bulk.

Keywords

defectselectronic structurethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1268: Symposium EE – Defects in Inorganic Photovoltaic Materials , 2010 , 1268-EE01-07
Copyright
Copyright © Materials Research Society 2010

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