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Impact of a Vicinal Growth Surface on AlAs / GaAs Superlattice Layer Thickness Measurements with Double Crystal X-ray Diffraction

Published online by Cambridge University Press:  26 February 2011

A. Leiberich ,
J. Levkoff  and
A. Robertson
A. Leiberich
Affiliation:
AT&T Bell Laboratories, Princeton, NJ 08540
J. Levkoff
Affiliation:
AT&T Bell Laboratories, Princeton, NJ 08540
A. Robertson
Affiliation:
AT&T Bell Laboratories, Princeton, NJ 08540
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Abstract

Microelectronic devices require deposition of sequences of thin epitaxial layers, with individual layer thicknesses in some instances specified to within tolerances of the order of inter-atomic spacings. Double crystal X-ray diffraction provides measurements of superlattice layer thicknesses to a resolution of the order of inter-atomic spacings, provided diffraction line shifts originating from substrate wafer misalignments are accounted for.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 177
Copyright
Copyright © Materials Research Society 1992

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References

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