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Impact of A Ti Adhesion Layer on Pt/PZT/Pt Capacitors

Published online by Cambridge University Press:  15 February 2011

R.E. Jones Jr ,
P.D. Mamar ,
J.L. Dupuie ,
J. Kim ,
R. Moazzamp ,
J. Witowski ,
M.L. Kottke ,
N.C. Saha  and
R.B. Gregory
R.E. Jones Jr
Affiliation:
Materials Research and Strategic Technologies, Motorola, Austin, TX 78721
P.D. Mamar
Affiliation:
Materials Research and Strategic Technologies, Motorola, Austin, TX 78721
J.L. Dupuie
Affiliation:
Materials Research and Strategic Technologies, Motorola, Austin, TX 78721
J. Kim
Affiliation:
Materials Research and Strategic Technologies, Motorola, Austin, TX 78721
R. Moazzamp
Affiliation:
Materials Research and Strategic Technologies, Motorola, Austin, TX 78721
J. Witowski
Affiliation:
Materials Research and Strategic Technologies, Motorola, Austin, TX 78721
M.L. Kottke
Affiliation:
Materials Research and Strategic Technologies, Motorola, Mesa, AZ 85202
N.C. Saha
Affiliation:
Materials Research and Strategic Technologies, Motorola, Mesa, AZ 85202
R.B. Gregory
Affiliation:
Materials Research and Strategic Technologies, Motorola, Mesa, AZ 85202
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Abstract

A five-factor, full-factorial experiment on process sensitivity of non-volatile polarization, Pnv for Pt/PZT/Pt capacitors shows the most dramatic factor is the use, or not, of a Ti adhesion layer for the bottom electrode. With the Ti layer, Pnv is generally lower and is sensitive to several factors and interactions involving the crystallization anneal, sol-gel synthesis, and Pt thickness and deposition temperature. A possible cause is Ti diffusion through the Pt as observed in Auger and XPS depth profiles of oxygen annealed Pt/Ti electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 223
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Maniar, P.D., Moazzami, R., Jones, R.E., Campbell, A.C., and Mogab, C.J. in Ferroelectric Thin Films III, edited by Myers, E.R.. Turtle, B.A., Desu, S.B., and Larsen, P.K. (Mater. Res. Soc. Proc. 310, San Francisco, CA, 1993) pp. 151–156.Google Scholar
2. Jones, R.E., Maniar, P.D., Campbell, A.C., Moazzami, R., Dupuie, J.L., Gregory, R.B., and Kottke, M.L., presented at International Symposium on Integrated Ferroelectrics, Monterey, CA 1994 (to be published).Google Scholar
3. Moazzami, R., Hu, C., and Shepherd, W.H., IEEE Transactions Electron Devices 39, 2044 (1992).Google Scholar