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Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy

Published online by Cambridge University Press:  26 February 2011

T. Foecke ,
R. King ,
A. Dale  and
W.W. Gerberich
T. Foecke
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis,MN 55455
R. King
Affiliation:
Optical Recording Division, 3M Company, Vadnais Heights, MN 55110
A. Dale
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis,MN 55455
W.W. Gerberich
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis,MN 55455
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Abstract

Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 617
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Sexton, B.A., Cotterill, G.F., Fletcher, S., and Home, M.D., J. Vac. Sci. Tech. A, 8 544 (1990).CrossRefGoogle Scholar
2. Miyazaki, Y., Koga, Y., and Hayashi, H., J. Vac. Sci. Tech. A, 8, 628 (1990).CrossRefGoogle Scholar
3. Cantu, R.G. and Garnica, M.A.H., J. Vac. Sci. Tech. A, 8, 354 (1990).CrossRefGoogle Scholar
4. Yasutake, M. and Miyata, C., J. Vac. Sci. Tech. A, 8, 350 (1990).CrossRefGoogle Scholar
5. Akama, Y., Nishimura, E., Sakai, A., and Murakami, H., J. Vac. Sci. Tech. A, 8, 429(1990).CrossRefGoogle Scholar
6. Denley, D.R., J. Vac. Sci. Tech. A, 8 603 (1990).CrossRefGoogle Scholar
7. Wilson, I.H., Zheng, N.J., Knipping, U., and Tsong, I.S.T., J. Vac. Sci. Tech. A, 7, 2840 (1989).CrossRefGoogle Scholar
8. Bonnell, D. and Clarke, D.R., APS Spring Meeting, March 1988 (unpublished)Google Scholar
9. Ohr, S.M, Mat. Sci. Eng., 72, 1 (1985).CrossRefGoogle Scholar
10. Chiao, Y.T. and Clarke, D.R., Acta Metall., 37, 203 (1989).CrossRefGoogle Scholar
11. Zheng, N.J. et al. . Phys. Rev. B., 38, 12780 (1988).CrossRefGoogle Scholar
12. Yokohata, T., Kato, K., and Ohmura, K., J. Vac. Sci. Tech. A,8,585 (1990).CrossRefGoogle Scholar
13. Foecke, T., King, R., Dale, A., and Gerberich, W.W., accepted J. Vac. Sci. Tech. A (1990)Google Scholar
14. Marshall, D.B. and Lawn, B.R., J. Materials Sci.,14,2001 (1979).CrossRefGoogle Scholar
15. Foecke, T. and King, R., unpublished results.Google Scholar