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Identification of Growth Precursors In Hot Wire CVD of Amorphous Silicon Films

Published online by Cambridge University Press:  17 March 2011

H. L. Duan ,
G. A. Zaharias  and
Stacey F. Bent
H. L. Duan
Affiliation:
Department of Chemical Engineering Stanford University Stanford, CA 94305
G. A. Zaharias
Affiliation:
Department of Chemical Engineering Stanford University Stanford, CA 94305
Stacey F. Bent
Affiliation:
Department of Chemical Engineering Stanford University Stanford, CA 94305
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Abstract

A soft ionization laser-based technique using 10.5 eV photon energy has been used to probe radical growth precursors in the hot wire chemical vapor deposition (HW-CVD) of a-Si:H. Using a Re filament, it is shown that Si, SiH3, and Si2H6are the major silicon-containing species formed from the hot wire dissociation of silane, and SiH2is at most a very minor product. However, chamber history is found to influence the radical species produced; i.e. SiH3 and Si2H6are largely related to the chamber wall and filament conditions. The gas species produced by W and Re filaments at wire temperatures between 1000oC and 2000oC have been studied and compared. Heating the filament to higher temperatures increases the flux of Si, SiH3 and Si2H6 in a similar fashion for both filament materials. Above 1800oC, the Si intensity saturates, while SiH3 and Si2H6show monotonic increase without saturation up to 2000oC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A3.1
Copyright
Copyright © Materials Research Society 2001

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References

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