Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:33:54.618Z Has data issue: false hasContentIssue false
  • English
  • Français

Identification of Growth Induced Planar Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

H. P. Strunk ,
A. Kessler  and
E. Bauser
H. P. Strunk
Affiliation:
Technische Universität Hamburg-Harburg, D-2100 Hamburg 90, FRG
A. Kessler
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, D-7000 Stuttgart 80M, FRG
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG
Get access

Abstract

Planar defects have been detected by transmission electron microscopy in silicon epitaxial layers that have been grown from Ga solutions below 500 °C. According to fringe contrast analysis, this defect can be modelled by a plane of Ga atoms within the Si lattice. This plane forms during crystal growth due to local preferential incorporation of Ga atoms at crystallographically defined sites, that occur repetitively in the trains of monomolecular growth steps at the liquid/solid growth interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 62: Symposium Q – Materials Problem Solving with the Transmission Electron Microscope , 1985 , 9
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Burton, W.K., Cabrera, N. and Frank, F.C., Phil. Trans. Roy. Soc. London A 243 299 (1951)Google Scholar
2 Volmer, M., Kinetik der Phasenbildung (Steinkopff, Dresden and Leipzig) 1939 Google Scholar
3 Maas, A., in Vorträge der Rheinisch-Westfälischen Akademie der Wissenschaften, Vol. N 301 (Westdeutscher Verlag, Wiesbaden) p. 51 Google Scholar
4 Honjo, G. and Yagi, K., in Current Topics in Materials Science, Vol. 6, edited by Kaldis, E. (North-Holland, Amsterdam) p. 196 Google Scholar
5 Bauser, E. and Strunk, H.P., J. Cryst. Growth 69 561 (1984)CrossRefGoogle Scholar
6 Bauser, E. and Strunk, H.P., J. Cryst. Growth 51 362 (1981)CrossRefGoogle Scholar
7 Kessler, A., Dr. rer. nat. thesis, 1985, to be publ.Google Scholar
8 Frank, F.C., Disc. Faraday Soc. 5 48 (1949)CrossRefGoogle Scholar
9 Bauser, E. and Strunk, H., Thin Solid Films 93 185 (1982)CrossRefGoogle Scholar
10 Kolbesen, B.O., Mayer, K.R., and Schuh, G.E., J. Phys. E. 8 197 (1975)CrossRefGoogle Scholar
11 Appel, W., Dr. rer. nat. thesis, University Stuttgart, 1985 Google Scholar
12 Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W. and Whelan, M.J., Electron Microscopy of Thin Crystals (Robert E. Krieger Publ. Co., Huntington, N.Y. 1977)Google Scholar
13 Käss, D., Warth, M., Appel, W., Strunk, H.P., and Bauser, E., Proc. First Int. Symp. on Si Molecular Beam Epitaxy, Toronto 1985, to be publishedGoogle Scholar
14 Bauser, E. and Rozgonyi, G.A., J. Electrochem.Soc. 129 1782 (1982)CrossRefGoogle Scholar
15 Finch, R.H., Queisser, H.d., Thomas, G. and Washburn, J., J. appl. Phys. 34 406 (1963)CrossRefGoogle Scholar