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Identification of Diffusion Associated Defects at III-V Semiconductor Heterostructures

Published online by Cambridge University Press:  22 February 2011

R. Enrique Viturro  and
Gary W. Wicks
R. Enrique Viturro
Affiliation:
Xerox Webster Research Center, 114–41D, 800 Phillips Rd., Webster, NY 14580
Gary W. Wicks
Affiliation:
Institute of Optics, University of Rochester, Rochester, NY 14620
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Abstract

Cathodoluminescence spectroscopy is used to identify diffusion-associated III-V semiconductor defects and establish their role in AlGaAs/GaAs intrinsic and n-type impurity induced interdiffusion (Si, Ge, S, and Se) for various ambient conditions, As- and Ga-rich. These identifications involves the study of the temperature and composition dependence of these deep levels and their correlation with theoretical calculations. Our results reveal Column III vacancies and their complexes as the sole mediators of diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 31
Copyright
Copyright © Materials Research Society 1994

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