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Identification of Arsenic Surface Species on the Si (100) Surface

Published online by Cambridge University Press:  15 February 2011

S. C. Perino  and
C. R. Helms
S. C. Perino
Affiliation:
Stanford Electronics Laboratories, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
C. R. Helms
Affiliation:
Stanford Electronics Laboratories, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
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Abstract

The molecular character of arsenic adsorbed on the Si (100) surface has been investigated using thermal desorption spectroscopy (TDS) and Auger electron spectroscopy (AES). A variety of arsenic surface species were deposited on the silicon surface by employing different evaporation sources, including metallic arsenic, arsine gas, and chips of GaAs crystals. We present coverage dependent spectra showing the desorption of As4 tetramers at 350°C and As2 dimers at 900°C. The loosely bound arsenic is adsorbed from the solid evaporation sources only and resides on the surface as tetramers. The tightly bound arsenic does not form multiple layers and the high desorption temperatures suggests the adsorbed arsenic exists as monomers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 147
Copyright
Copyright © Materials Research Society 1982

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References

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