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Identification and Reduction of P-I Interface Instability and Establishment of 8.5% Stabilized Efficiency for Single Junction a-Si Solar Cells

Published online by Cambridge University Press:  16 February 2011

Jianping Xi ,
Tongyu Liu ,
Vincent Iafelice ,
Kevin Si  and
Frank Rampas
Jianping Xi
Affiliation:
Advanced Photovoltaic Systems, Inc., P.O. Box 7059, Princeton, NJ 08543
Tongyu Liu
Affiliation:
Advanced Photovoltaic Systems, Inc., P.O. Box 7059, Princeton, NJ 08543
Vincent Iafelice
Affiliation:
Advanced Photovoltaic Systems, Inc., P.O. Box 7059, Princeton, NJ 08543
Kevin Si
Affiliation:
Advanced Photovoltaic Systems, Inc., P.O. Box 7059, Princeton, NJ 08543
Frank Rampas
Affiliation:
Advanced Photovoltaic Systems, Inc., P.O. Box 7059, Princeton, NJ 08543
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Abstract

Our previously reported 7.5% stabilized efficiency single junction a-Si devices had relatively low Voc, around 0.80 volts. Devices with higher Voc tended to exhibit a decrease in Voc upon light soaking. This effect was found to be independent of the properties of the i-layer. Further optimizing the p layer and p-i interface has enabled us to produce single junction devices with a stable Voc of up to 0.86 volts and a 8.5% stabilized device efficiency has been established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 681
Copyright
Copyright © Materials Research Society 1994

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References

8. References

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