Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-20T14:51:45.589Z Has data issue: false hasContentIssue false
  • English
  • Français

The Ideality of Spatially Inhomogeneous Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

Uwe Rau ,
Herbert H. Güttler  and
Jürgen H. Werner
Uwe Rau
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
Herbert H. Güttler
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
Jürgen H. Werner
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
Get access

Abstract

We present a new analytical theory of electronic transport for inhomogeneous Schottky contacts. Our model combines a novel method to solve Poisson's equation for the space charge region of an inhomogeneous contact with thermionic emission theory. We explain quantitatively the temperature and voltage dependences of the ideality factor n of current/voltage characteristics, and we are able to extract from experimental data information on the characteristic size of the inhomogeneities. Our measurements on polycrystalline and epitaxial Schottky contacts yield values in the range of 200–500nm as the typical size of inhomogeneities, covering a fraction of 0.1–1% of the total interface area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 245
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Werner, J. H. and Güttier, H. H., J. Appl. Phys. 69, 1523 (1991).Google Scholar
[2] Güttler, H. H. and Werner, J. H., Appl. Phys. Lett. 56, 1113 (1990).Google Scholar
[3] Rau, U., Güttier, H. H., and Werner, J. H., these proceedings.Google Scholar
[4] Tung, R. T., Appl. Phys. Lett. 58, 2821 (1991).CrossRefGoogle Scholar
[5] Tung, R. T., Levi, A. F. J., Sullivan, J. P., and Schrey, F., Phys. Rev. Lett. 6, 72 (1992).Google Scholar
[6] Sullivan, J. P., Tung, R. T., Pinto, M. R., and Graham, W. R., J. Appl. Phys. 70, 7403 (1991)Google Scholar
[7] Werner, J. H. and Güttler, H. H., Physica Skripta T 39, 258 (1991).Google Scholar
[8] Werner, J. H., Güttler, H. H., and Rau, U., these proceedings.Google Scholar
[9] Rau, U., Güttler, H. H., and Werner, J. H., (unpublished).Google Scholar