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Ibad Diffusion Barriers Between YBaCuO and Si

Published online by Cambridge University Press:  28 February 2011

Anton Greenwald ,
James Hirvonen ,
Narendra Jaggi  and
John Allen
Anton Greenwald
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
James Hirvonen
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Narendra Jaggi
Affiliation:
Dept. of Physics, Northeastern Univ., Boston, MA 02115
John Allen
Affiliation:
CVC Products Inc., 525 Lee Road, Rochester, NY 14603
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Abstract

Different materials were investigated for use as diffusion barriers between silicon and yttrium barium copper oxide (YBCO). Ion beam assisted deposition (IBAD) of 300nm zirconia films at room temperature prevented interdiffusion at sintering temperatures over 800°C. Similar MgO and indium-tin oxide films did not prevent degradation at elevated temperatures. All films deposited on top of YBCO reduced the effects of extended atmospheric exposure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 1153
Copyright
Copyright © Materials Research Society 1990

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