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Hydrothermal Epitaxy of I:V Perovskite Thin Films

Published online by Cambridge University Press:  01 February 2011

Gregory K. L. Goh  and
Suresh K. Donthu
Gregory K. L. Goh
Affiliation:
Institute of Materials Research and Engineering 3 Research Link, Singapore 117602, Singapore
Suresh K. Donthu
Affiliation:
Institute of Materials Research and Engineering 3 Research Link, Singapore 117602, Singapore
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Abstract

Although epitaxial II:IV perovskite films like BaTiO3 and Pb(Zr,Ti)O3 have been grown by the hydrothermal method, there are hardly any reports on the growth of I:V perovskite thin films by this low temperature technique. In this study, thin films of NaNbO3, KTaO3 and KNbO3 were grown on (100) oriented single crystal SrTiO3 substrates by the hydrothermal method at 200°C and below. X-ray diffraction (XRD) revealed that the as-synthesized films were epitaxial with one of their original cubic axes normal to the substrate (100) plane. Scanning electron microscopy (SEM) showed that the films formed by an island growth mechanism. KTaO3 was also used as a buffer layer in the growth of KNbO3 films in order to investigate the effect of lattice mismatch on surface morphology and epitaxial quality, as determined by SEM and XRD rocking curve measurements, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 718: Symposium D – Perovskite Materials , 2002 , D10.13
Copyright
Copyright © Materials Research Society 2002

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References

1. Gunter, P., Opt. Commun., 11, 285 (1974).Google Scholar
2. Uematsu, Y., Jpn. J. Appl. Phys., 13, 1362 (1974).Google Scholar
3. Gunter, P. and Micheron, F., Ferroelectrics, 18, 27 (1978).Google Scholar
4. Prusseit, W., Boatner, L. A. and Rytz, D., Appl. Phys. Lett., 69, 2187, 1996.Google Scholar
5. Feenstra, R., Boatner, L.A., Budai, J.D., Christen, D.K., Galloway, M.D. and Poker, D.B., Appl. Phys. Lett., 54, 1063, 1988.Google Scholar
6. Vendik, O. G., Hollmann, E. K., Kozyrev, A. B. and Prudan, A. M., J. Superconductivity, 12[2], 325 (1999).Google Scholar
7. Christen, H-M., Boatner, L.A., Budai, J.D., Chisholm, M.F., Gea, L.A., Marrero, P. and Norton, D.P., Appl. Phys. Lett., 68, 1488, 1996.Google Scholar
8. Cho, C-R., Koh, J-H., Grishin, A., Abadei, S., and Gevorgian, S., Appl. Phys. Lett., 76[13], 1761, 2000.Google Scholar
9. Wang, X., Helmersson, U., Olafsson, S., Rudner, S., Wernlund, L-D. and Gevorgian, S., Appl. Phys. Lett., 73[7], 927, 1998.Google Scholar
10. Chien, A. T., Zhao, L., Colic, M., Speck, J. S. and Lange, F. F., J. Mater. Res., 13[3], 649 (1998).Google Scholar
11. Chien, A. T., Speck, J. S. and Lange, F. F., J. Mater. Res., 12[5], 1176, 1997.Google Scholar
12. Han, K. S., Chien, A. T., Yoon, Y. S., Speck, J. S. and Lange, F. F., unpublished work.Google Scholar
13. Jona, F. and Shirane, G., Ferroelectric Crystals, (Pergamon Press, England, 1962), p227.Google Scholar