Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-18T06:46:26.533Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen'S Effect on Stability of Undoped A-Si:H Under Light Soaking

Published online by Cambridge University Press:  10 February 2011

O.A. Golikova ,
M.M. Kazanin ,
A.N. Kuznetsov ,
V.Kh. Kudoyarova ,
G.J. Adriaenssens ,
W. Grevendonk  and
A. Eliat
O.A. Golikova
Affiliation:
A.F. loffe Physico-Technical Institute, 194021, St. Petersburg, Russia
M.M. Kazanin
Affiliation:
A.F. loffe Physico-Technical Institute, 194021, St. Petersburg, Russia
A.N. Kuznetsov
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
V.Kh. Kudoyarova
Affiliation:
A.F. loffe Physico-Technical Institute, 194021, St. Petersburg, Russia
G.J. Adriaenssens
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
W. Grevendonk
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
A. Eliat
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
Get access

Abstract

Light-soaking kinetics of photoconductivity at room temperature for undoped a-Si:H films deposited by rf-plasma enhanced chemical vapor deposition and by dc-magnetron assisted decomposition at T8 = 300 and 350°C have been investigated. The rate of degradation has been expressed by the value of exponent of the power law: σph∼t−y. The hydrogen content in the films, the type of Si-H bonds and their contribution as well as the Fermi level position were controlled by changes in the deposition conditions. Hydrogen's effect on the y value was shown for the different cases. The films, having γ=0, were identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 625
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Shimizu, Tasuo, Kumeda, Minoru, Zhang, Qing, Zhang, Jinyan, Ohtsuka, Toshihiro. in Amorphous Silicon Technology-1996 edited by Hack, M., Schift, E.A., Powell, M., Matsuda, A., Madan, A. (Mater. Res. Soc.Symp Proc. 377 Pittsburg, PA 1995) p.p. 239–244.Google Scholar
2 Sauvain, E., Pipoz, P., Shah, A., Hubin, J.. J. Appl. Phys. 75, 1722 (1994).Google Scholar
3 Golikova, O.A.. Sov. Phys Semicond. 25, 915 (1991).Google Scholar
4 Golikova, O.A., Kuznetsov, A.N., Kudoyarova, V.Kh., Kazanin, M.M., Kosarev, A.I.. in Amorphous Silicon Technology-1996 edited by Hack, M., Schiff, E.A., Wagner, S., Schropp, R., Matsuda, A. (Mater. Res. Soc.Symp Proc. 420 Pittsburg, PA 1996) p.p. 353–356.Google Scholar
5 Golikova, O.A., Kuznetsov, A.N., Kudoyarova, V. Kh., Adriaenssens, G.J., Herremans, H. in Amorphous and Microcrystalline Silicon Technology- 1997 edited by Wagner, S., Hack, M., Schiff, E.A., Schropp, R., Shimizu, I. (Mater. Res. Soc.Symp Proc. 467 Pittsburg PA 1997) p.p. 519–524.Google Scholar
6 Golikova, O.A., Kudoyarova, V.Kh.. Semiconductors 29 (1995) 1128.Google Scholar
7 Zellama, K., Chahed, L., Sladec, P., Theye, M.L., Bardeleben, J.H. von, Cabarrocas, P. Roca i. Phys. Rev. B53, 3804 (1996).Google Scholar