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Hydrogen'S Effect on Stability of Undoped A-Si:H Under Light Soaking

Published online by Cambridge University Press:  10 February 2011

O.A. Golikova ,
M.M. Kazanin ,
A.N. Kuznetsov ,
V.Kh. Kudoyarova ,
G.J. Adriaenssens ,
W. Grevendonk  and
A. Eliat
O.A. Golikova
Affiliation:
A.F. loffe Physico-Technical Institute, 194021, St. Petersburg, Russia
M.M. Kazanin
Affiliation:
A.F. loffe Physico-Technical Institute, 194021, St. Petersburg, Russia
A.N. Kuznetsov
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
V.Kh. Kudoyarova
Affiliation:
A.F. loffe Physico-Technical Institute, 194021, St. Petersburg, Russia
G.J. Adriaenssens
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
W. Grevendonk
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
A. Eliat
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium
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Abstract

Light-soaking kinetics of photoconductivity at room temperature for undoped a-Si:H films deposited by rf-plasma enhanced chemical vapor deposition and by dc-magnetron assisted decomposition at T8 = 300 and 350°C have been investigated. The rate of degradation has been expressed by the value of exponent of the power law: σph∼t−y. The hydrogen content in the films, the type of Si-H bonds and their contribution as well as the Fermi level position were controlled by changes in the deposition conditions. Hydrogen's effect on the y value was shown for the different cases. The films, having γ=0, were identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 625
Copyright
Copyright © Materials Research Society 1998

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References

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