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Hydrogenation of B and P Implanted LPCVD Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Stanislaw M. Pietruszko
Stanislaw M. Pietruszko*
Affiliation:
Warsaw University of Technology, Institute of Microelectronics and Opto-electronics, IMiO PW, Koszykowa 75, 00–662 Warszawa, Poland
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Abstract

The results of the investigation of doping by B and P ion implantation into LPCVD amorphous silicon films in the range from 2*1015 to 2*1021 atoms/cm3 are presented. The room temperature conductivity increases to 10-2 Ω-1 cm-1 and to 10-2 Ω-1 cm-1 for the highest B and P doping, respectively. The subsequent hydrogenation (2.5 and 5 at%) by ion implantation increases the doping efficiency for P doping. For B doping efficiency increases at the low and decreases for the high doping range. The results of conductivity measurements vs temperature of doped and hydrogenated films are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 87
Copyright
Copyright © Materials Research Society 1992

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References

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