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Hydrogen Segregation at the Al/Si Interface Studied Using a Nuclear Resonant Reaction

Published online by Cambridge University Press:  25 February 2011

Joyce C. Liu ,
A.D. Marwick  and
F.K. Legoues
Joyce C. Liu
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
A.D. Marwick
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
F.K. Legoues
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Hydrogen segregation at the interface between an epitaxial Al film and a Si (111) substrate is studied using the 1H(15N, αγ)12C nuclear resonant reaction. Hydrogen depth profiles show that H atoms diffuse through the 1600 Å thick Al layer during 500 eV H implantation and are trapped at the Al/Si interface. The total amount of interface H is about 2 × 1015 /cm2 after a 1.4 × 1018 H/cm2 implantation, and the H atoms are narrowly distributed in the direction normal to the interface. During an isothermal anneal at 360 K, the amount of interface H decreases exponentially with annealing time; and during ramp annealing from 110 to 500 K, an abrupt release of the interface H is observed at temperature around 380 K. The release rates in both cases are controlled by a first order thermally activated de-trapping process with a binding energy of 0.86 eV/atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 437
Copyright
Copyright © Materials Research Society 1990

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