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Hydrogen Passivation Studies in Dislocated CZ and FZ Silicon

Published online by Cambridge University Press:  25 February 2011

C. Dubé ,
J. P. Kalejs  and
S. Rajendran
C. Dubé
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, Mass 01821
J. P. Kalejs
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, Mass 01821
S. Rajendran
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, Mass 01821
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Abstract

Hydrogen passivation using a Kaufmann ion source at 400°C has been carried out on FZ and CZ silicon dislocated by four-point bending at high temperatures. The results differ from those reported for dislocations passivated in silicon sheet grown by the EFG technique. A model for hydrogen diffusion and trapping is presented to argue that the differences observed are not produced by hydrogen transport effects in the bulk.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 459
Copyright
Copyright © Materials Research Society 1990

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References

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