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Hydrogen Passivation Studies in Dislocated CZ and FZ Silicon

Published online by Cambridge University Press:  25 February 2011

C. Dubé
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, Mass 01821
J. P. Kalejs
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, Mass 01821
S. Rajendran
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, Mass 01821
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Abstract

Hydrogen passivation using a Kaufmann ion source at 400°C has been carried out on FZ and CZ silicon dislocated by four-point bending at high temperatures. The results differ from those reported for dislocations passivated in silicon sheet grown by the EFG technique. A model for hydrogen diffusion and trapping is presented to argue that the differences observed are not produced by hydrogen transport effects in the bulk.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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