Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:33:47.824Z Has data issue: false hasContentIssue false

Hydrogen Passivation of Thin-film Polysilicon Solar Cells

Published online by Cambridge University Press:  01 February 2011

Lode Carnel
Affiliation:
[email protected], imec, mcp ssc, kapeldreef, leuven, 3001, Belgium, 003216288734
Ivan Gordon
Affiliation:
[email protected], imec, mcp ssc, kapeldreef, leuven, 3001, Belgium
Dries Van Gestel
Affiliation:
[email protected], imec, mcp ssc, kapeldreef, leuven, 3001, Belgium
Guy Beaucarne
Affiliation:
[email protected], imec, mcp ssc, kapeldreef, leuven, 3001, Belgium
Jef Poortmans
Affiliation:
[email protected], imec, mcp ssc, kapeldreef, leuven, 3001, Belgium
Get access

Abstract

Thin-film polysilicon solar cells are a promising low-cost alternative for bulk silicon solar cells. Due to their reduced material thickness, these solar cells are less dependent on the silicon feedstock price. Until now these devices showed a worse performance compared to bulk Si solar cells due to the small grain size and the high recombination velocity at the grain boundaries. A better understanding of hydrogen passivation is therefore of crucial importance to improve the efficiency of polysilicon solar cells. In this work we characterized fine-grained polysilicon layers with a grain size of only 0.2 μm before and after passivation. Plasma hydrogenation led to a higher hydrogen concentration in the first micron of the layer than nitride passivation. The highest efficiency of 5.0 % was reached when nitride passivation was followed by plasma passivation.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Beaucarne, G. and Slaoui, A. in Thin-film Solar Cells: Fabrication, Characterization and Applications, edited by Poortmans, J. and Arkhipov, V. (Wiley, New York, 2006) pp. 97131 Google Scholar
2 Gestel, D. Van, et al., Appl. Phys. Lett. 90, 092103 (2007)Google Scholar
3 Carnel, L., et al., Electron Device Lett. 27, 163 (2006)Google Scholar
4 Nickel, N. H., et al., Phys. Rev. B 66, 075211 (2002)Google Scholar
5 Carnel, L., et al., J. of Appl. Phys. 100, 063702 (2006)Google Scholar
6 Johnson, N. M., et al., Appl. Phys. Lett. 40, 882 (1982)Google Scholar
7 Walle, C. G. Van de, et al., Phys. Rev. B 51, 2636 (1995)Google Scholar
8 Beaucarne, G., et al., Solid State Phenom. 67–68, 577 (1999)Google Scholar
9 Carnel, L., et al., Thin Solid Films 511-512, 21 (2006)Google Scholar
10 Taretto, K., et al., J. Appl. Phys. 93, 5445 (2003)Google Scholar