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Hydrogen Passivation of Si Nanocrystals in Silica

Published online by Cambridge University Press:  21 March 2011

Stephanie Cheylan  and
Robert G. Elliman
Stephanie Cheylan
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
Robert G. Elliman
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
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Abstract

This paper explores the effect of hydrogen on the luminescence properties of silicon nanocrystals formed in silica by high-dose ion-implantation and thermal annealing. For samples implanted to low fluence (small nanocrystals), passivation is shown to result in a uniform enhancement of the PL emission for all wavelengths. However, for samples implanted to high fluence, preferential enhancement of the emission from larger nanocrystals is evident, resulting in a red-shift of emission spectra. Both the intensity enhancement and the red-shift are shown to be reversible, with spectra returning to their pre-passivation form when H is removed from the samples by annealing. The luminescence lifetime is also shown to increase after passivation, confirming that defect-containing nanocrystals luminesce.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 650: Symposium R – Microstructural Processes in Irradiated Materials-2000 , 2000 , R3.38
Copyright
Copyright © Materials Research Society 2001

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References

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