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Hydrogen Passivation of GaAs:C Epitaxial Layers Grown from Metalorganic Sources

Published online by Cambridge University Press:  26 February 2011

Michael Stavola ,
D. M. Kozuch ,
C. R. Abernathy  and
W. S. Hobson
Michael Stavola
Affiliation:
Physics Department, Lehigh University, Bethlehem, PA 18015
D. M. Kozuch
Affiliation:
Physics Department, Lehigh University, Bethlehem, PA 18015
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Carbon is readily incorporated into epitaxial GaAs and related alloys grown from metalorganic sources. Hydrogen is also readily incorporated during growth and processing from essentially every possible source including the metalorganics, AsH3, and H2 that are used during growth or in annealing ambients. This hydrogen forms stable neutral complexes with carbon thereby altering the intended p-type doping. In this paper, the properties of the C-H complexes as well as the sources of hydrogen, the stability of passivation, and the concentration of C-H complexes in epitaxial layers will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 75
Copyright
Copyright © Materials Research Society 1992

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References

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