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Hydrogen Passivation of Er and Si Nanocrystallites in Er-doped SiO2 - Increase in Photoluminescence-

Published online by Cambridge University Press:  01 February 2011

N. Fukata ,
C. Li ,
H. Uematsu ,
T. Arai ,
T. Makimura  and
K. Murakami
N. Fukata
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan Special Research Project on Nanoscience, University of Tsukuba, Tsukuba 305–8573, Japan
C. Li
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan
H. Uematsu
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan
T. Arai
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan
T. Makimura
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan
K. Murakami
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan Special Research Project on Nanoscience, University of Tsukuba, Tsukuba 305–8573, Japan
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Abstract

Hydrogen passivation effect on the enhancement of photoluminescence (PL) of Er ions in SiO2 films contained Si nanocrystallites (nc-Si) has been investigated. Er-doped SiO2 films were fabricated by laser ablation of Er-deposited Si substrate in oxygen gas atmosphere. The PL intensity of Er ions and nc-Si were increased by hydrogen gas treatments, while ESR signal intensity of residual defects located at the interfaces between nc-Si and SiO2 was decreased. These results indicate that hydrogen passivation of residual defects is useful for the enhancement of the Er PL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F10.2
Copyright
Copyright © Materials Research Society 2005

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References

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