Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T06:27:48.585Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Passivation of Doped and Undoped Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

M. Stutzmann ,
C.P. Herrero ,
M. Ingels  and
A. Breitschwerdt
M. Stutzmann
Affiliation:
Max-Planck-Institut ffir Festkörperforschung, D-7000 Stuttgart 80, FRG
C.P. Herrero
Affiliation:
Instituto de Ciencia de Materiales, Serrano, 115 dpdo, 28006 Madrid, Spain
M. Ingels
Affiliation:
Max-Planck-Institut ffir Festkörperforschung, D-7000 Stuttgart 80, FRG
A. Breitschwerdt
Affiliation:
Max-Planck-Institut ffir Festkörperforschung, D-7000 Stuttgart 80, FRG
Get access

Abstract

The effect of hydrogen plasma treatment on the properties of undoped and doped microcrystalline silicon are investigated by Raman and infrared spectroscopy, conductivity measurements, hydrogen effusion, and subgap absorption. It is found that hydrogen causes a passivation of dopant atoms similar to that seen in crystalline silicon. However, the efficiency of the dopant passivation appears to be smaller in μc-Si, and the vibrational spectra of dopants and hydrogen show distinct broadening due to local disorder. It is suggested that intergrain regions may efficiently getter atomic hydrogen introduced from the plasma and also provide the origin for a weakly bound hydrogen phase observed in the effusion experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 189
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Pearton, S.J., Corbett, J.W., Shi, T.S., Appl. Phys. A 43, 153 (1987).Google Scholar
[2] Johnson, N.M., Ready, S.E., Boyce, J.B., Doland, C.D., Wolff, S.H., Walker, J., Appl. Phys. Lett. 53, 1626 (1988).Google Scholar
[3] Jackson, W.B., Johnson, N.M., Biegelsen, D.K., Appl. Phys. Lett. 43, 195 (1983).Google Scholar
[4] Hasegawa, S., Takenaka, S., Kurata, Y., J. Appl. Phys. 53, 5022 (1982).Google Scholar
[5] Bergman, K., Stavola, M., Pearton, S.J., Lopata, J., Phys. Rev. B 37, 2770 (1988).Google Scholar
[6] Stutzmann, M., Phys. Rev. B 35, 5921 (1987).Google Scholar
[7] Herrero, C.P., Stutzmann, M., Breitschwerdt, A., this meeting, Symposium G.Google Scholar
[8] Street, R.A., Kakalios, J., Tsai, C.C., Hayes, T.M., Phys. Rev. B 35, 1316 (1987).Google Scholar
[9] Stutzmann, M., M. S. Brandt (unpublished).Google Scholar
[10] Herrero, C.P., Stutzmann, M., Solid State Commun. 68, 1085 (1988).Google Scholar
[11] Ingels, M., Stutzmann, M., Zollner, S., this volume.Google Scholar