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Hydrogen Passivation of Defects in InGaAs/AlxGal-xAs Quantum Wells

Published online by Cambridge University Press:  03 September 2012

S. M. Lord ,
G. Roos ,
B. Pezeshki ,
J. S. Harris Jr  and
N. M. Johnson
S. M. Lord
Affiliation:
Stanford University, Solid State Electronics Laboratory, Department of Electrical Engineering, Stanford CA
G. Roos
Affiliation:
Stanford University, Solid State Electronics Laboratory, Department of Electrical Engineering, Stanford CA
B. Pezeshki
Affiliation:
Stanford University, Solid State Electronics Laboratory, Department of Electrical Engineering, Stanford CA
J. S. Harris Jr
Affiliation:
Stanford University, Solid State Electronics Laboratory, Department of Electrical Engineering, Stanford CA
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Electronic Materials Laboratory, Palo Alto, CA.
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Abstract

The effect of the diffusion of monatomic hydrogen into InGaAs/AlGaAs quantum wells has been investigated using photoluminescence (PL) and Secondary Ion Mass Spectroscopy (SIMS). The structures were grown by molecular beam epitaxy and hydrogenated with a remote plasma. For In0.2Ga0.8AlxGA1-xAs quantum wells, hydrogenation significant increases the integrated PL intensity from bound excitons at 77 K. The enhancement of the PL is ascribed to removal of nonradiative recombination centers by hydrogen passivation of defects either at the heterojunction interface or within the epilayers. This PL enhancement (and defect passivation) increases as the Al concentration in the AlGaAs layers increases from 0 to 33 at%. A 50% increase of PL intensity is observed for InGaAs/GaAs. For 33 at%, the increase is a factor of 9. We also diffused deuterium into these InGaAs/AlGaAs quantum wells. The enhancement of the PL by deuteration was similar to that by hydrogenation. The isotopie substitution permits the determination of the depth distribution of deuterium in the multilayered structure by SIMS. SIMS results support the conclusion that more defects are passivated in the higher Al concentration samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 881
Copyright
Copyright © Materials Research Society 1992

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References

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