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Hydrogen Passivation and Ozone Oxidation of Silicon Surface

Published online by Cambridge University Press:  10 February 2011

Akira Kurokawa ,
Ken Nakamura  and
Shingo Ichimura
Akira Kurokawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Ken Nakamura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Shingo Ichimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
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Abstract

The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy(XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for HSi(111). The dissociation rate of ozone molecule on H/Si was estimated to be ≃0.2 with a directional mass analyzer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 37
Copyright
Copyright © Materials Research Society 1998

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References

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