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Hydrogen in Silicon-Unanswered Questions

Published online by Cambridge University Press:  28 February 2011

S. J. Pearton
S. J. Pearton*
Affiliation:
AT & T Bell Laboratories, Murray Hill, NJ 07974
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Extract

The study of hydrogen in crystalline Si has enjoyed a resurgence of interest in recent times, principally because hydrogen is a common constituent of many semiconductor reagents, and also because of its ability to passivate the electrically activity of shallow acceptor dopants, and many deep contaminating centers in Si. This enables its use as a sensitive probe of the defect chemistry occurring in Si at relatively low temperatures – the presence of hydrogen can be detected electrically through the passivation of impurities and defects, and isotopic substitution with deuterium enables chemical analysis by secondary ion mass spectrometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 11
Copyright
Copyright © Materials Research Society 1986

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References

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