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Hydrogen in RF Reactive Magnetron Sputtered Silicon Nitride Films

Published online by Cambridge University Press:  22 February 2011

Chi-Hsien Lin ,
J. B. Wachtman ,
G. H. Sigel ,
R. L. Pfeffer ,
T. P. Monahan  and
R. T. Lareau
Chi-Hsien Lin
Affiliation:
Department of Ceramics, Rutgers University, Piscataway, NJ 08855.
J. B. Wachtman
Affiliation:
Department of Ceramics, Rutgers University, Piscataway, NJ 08855.
G. H. Sigel
Affiliation:
Department of Ceramics, Rutgers University, Piscataway, NJ 08855.
R. L. Pfeffer
Affiliation:
U.S. Army Research Laboratory, EPSD, Fort Monmouth, NJ 07703.
T. P. Monahan
Affiliation:
U.S. Army Research Laboratory, EPSD, Fort Monmouth, NJ 07703.
R. T. Lareau
Affiliation:
U.S. Army Research Laboratory, EPSD, Fort Monmouth, NJ 07703.
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Abstract

ABSTRACT: Silicon nitride films (a-SixN1−x:H) have been prepared by rf reactive magnetron sputtering from a silicon target in a mixture gas of Ar, N2, and H2. The effects of the presence of hydrogen gas have been related to the refractive index, deposition rate, etch rate, and the Si-H and N-H bonding in the films. Hydrogen contents were measured by a quadrupole secondary ion mass spectrometer (SIMS) using deuterium implanted samples as reference standards. The deuterium implanted samples were annealed at 900°C for various periods of time to study the diffusion behavior of deuterium and hydrogen in a Si-rich and a nearly stoichiometric silicon nitride film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 21
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Valco, G.J. and Kapoor, V.J., in Silicon Nitride Thin Insulating Films, edited by Kapoor, V.J. and Stein, H.J. (The Electrochemical Society, Pennington, NJ, 1983), Proc. Vol. 83–8, p128.Google Scholar
2. Turner, G.W. and Connors, M.K., J. Electrochem. Soc., 131, 1211 (1984).Google Scholar
3. Blaauw, C., Spring Thorpe, A.J., Dzioba, S., and Emmerstorfer, B., J. Electron. Mater., 13, 251 (1984).Google Scholar
4. Maeda, M. and Nakamura, H., Thin Solid Films, 112, 279 (1984).Google Scholar
5. Stein, H.J. and Wegener, H.A.R., J. Electrochem. Soc., 124, 908 (1977).Google Scholar
6. Lanford, W.A. and Rand, M.J., J. Appl. Phys., 49, 2473 (1978).Google Scholar
7. Gupta, M., Rathi, V.K., Thangaraj, R., Agnihotri, O.P., and Chari, K.S., Thin Solid Films, 204, 77 (1991).Google Scholar
8. Shimizu, T., Oozora, S., Morimoto, A., Kumeda, M., and Ishii, N., Sol. Energy Mater. 8, 311 (1982).Google Scholar
9. Bandyopadhyay, A.K., Bhattacharyya, T.K., Banerjee, R., Batabyal, A.K., and Barua, A.K., Appl. Phys. A 52, 339 (1991).Google Scholar
10. Schols, G. and Maes, H.E., in Silicon Nitride Thin Insulating Films, edited by Kapoor, V.J. and Stein, H.J. (The Electrochemical Society, Pennington, NJ, 1983), Proc, Vol. 83–8, p94.Google Scholar
11. Clarke, P.J., U.S. Patent 3616450 (1971).Google Scholar
12. Chow, R., Lanford, W.A., Ke-Ming, W., and Rosier, R.S., J. Appl. Phys., 53, 5630 (1982).Google Scholar
13. Peercy, P.S., Stein, H.J., Doyle, B.L., and Picraux, S.T., J. Electron. Mater., 8, 11 (1979).Google Scholar
14. Arnold Bik, W.M., Linssen, R.N.H., Habraken, F.H.P.M., and van der Weg, W. F., and Kuiper, A.E.T., Appl. Phys. Lett., 56 (25), 2530 (1990).Google Scholar