Hostname: page-component-669899f699-ggqkh Total loading time: 0 Render date: 2025-04-30T21:08:48.982Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen in Compound Semiconductors

Published online by Cambridge University Press:  03 September 2012

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Get access

Abstract

Phenomena associated with hydrogen in compound semiconductors include the formation of complexes with both dopant impurities and deep-level defects, the generation of hydrogen-related deep-level defects, and the migration of isolated hydrogen as a charged species. In addition to reviewing these phenomena, this paper describes the depletion-layer technique for determining thermal dissociation energies of hydrogen-impurity complexes and presents an updated tabulation of the parameters that have thus far been obtained from experimental studies to quantitatively describe hydrogen-dopant complexes and hydrogen migration in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 369
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Jackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., and Holonyak, N. Jr, Appl. Phys. Lett. 51, 1629 (1987).Google Scholar
2. Constant, E., Electron. Lett. 23, 841 (1987).Google Scholar
3. Lagowski, J., Kaminska, M., Pasey, J. M. Jr, Gatos, H. C., and Lichtensteiger, M., Appl. Phys. Lett. 41, 1078 (1982).Google Scholar
4. Nabity, J. C., Stavola, M., Lopata, J., Dautremont-Smith, W. C., Tu, C. W., and Pearton, S. J., Appl. Phys. Lett. 50, 921 (1987).CrossRefGoogle Scholar
5. Chevallier, J., Clerjaud, B., Pajot, B., Hydrogen in Semiconductors, eds. Pankove, J. I. and Johnson, N. M., Semiconductors and Semimetals Vol. 34 (Academician Diego, 1991), Chap. 13.Google Scholar
6. Chevallier, J. and Pajot, B., Mater. Sci. Forum 83–87, 539 (1992).Google Scholar
7. Van de Walle, C. G., in Deep Centers in Semiconductors. 2nd Edition (Gordon and Breach, New York, 1992), ed. Pantelides, S. T., in press.Google Scholar
8. Physica B 170, (1991).Google Scholar
9. Mater. Sci. Forum 83–87, (1992).Google Scholar
10. this proceedings.Google Scholar
11. Wilson, R. G., Appl. Phys. Lett. 49, 1375 (1986).Google Scholar
12. Neethling, J. H., Snyman, H. C., and Ball, C. A. B., J. Appl. Phys. 63, 704 (1988).Google Scholar
13. Kiefl, R. F. and Estle, T. L., Hydrogen in Semiconductors, eds. Pankove, J. I. and Johnson, N. M., Semiconductors and Semimetals Vol. 34 (Academic, San Diego, 1991), Chap. 15.Google Scholar
14. DeLeo, G. G. and Fowler, W. B., Hydrogen in Semiconductors, eds. Pankove, J. I. and Johnson, N. M., Semiconductors and Semimetals Vol. 34 (Academic, San Diego, 1991), Chap. 14.Google Scholar
15. Van de Walle, C. G., Hydrogen in Semiconductors, eds. Pankove, J. I. and Johnson, N. M., Semiconductors and Semimetals Vol. 34 (Academic, San Diego, 1991), Chap. 16.Google Scholar
16. Jones, R., Oberg, S., and Umerski, A., Mater. Sci. Forum 83–87, 551 (1992).CrossRefGoogle Scholar
17. Pavesi, L and Giannozzi, P., Phys. Rev. B 46, (1992), in press.Google Scholar
18. Chevallier, J., Dautremont-Smith, W. C., Tu, C. W., and Pearton, S. J., Appl. Phys. Lett. 47, 108 (1985).Google Scholar
19. Johnson, N. M., Burnham, R. D., Street, R. A., and Thornton, R. L., Phys. Rev. B 33, 1102 (1986).Google Scholar
20. Dautremont-Smith, W. C., Mat. Res. Soc. Symp. Proc. 104, 313 (1988).Google Scholar
21. Roos, G., Johnson, N. M., Herring, C., and Harris, J. S. Jr, Mater. Sci. Forum 83–87, 605 (1992).Google Scholar
22. Roos, G., Johnson, N. M., Herring, C., Chung, H. F., Thornton, R. L., and Harris, J. S. Jr, Proceedings of the Electrochemical Society Meeting, Phoenix, Arizona, 13–18 October 1991, in press.Google Scholar
23. Anteil, G. R., Briggs, A. T. R., Butler, B. R., Kitching, S. A., Stagg, J. P., Chen, A., and Sykes, D. E., Appl. Phys. Lett. 53, 758 (1988).CrossRefGoogle Scholar
24. Chevallier, J., Jalil, A., Theys, B., Pesant, J. C, Aucouturier, M., Rose, B., and Mircea, A., Semicond. Sci. Technol. 4, 87 (1989).Google Scholar
25. Lopata, J., Dautremont-Smith, W. C., Pearton, S. J., Lee, J. W., and Ha, N. T., Mat. Res. Soc. Symp. Proc. 163, 501 (1990).Google Scholar
26. Omeljanovsky, E. M., Pakhomov, A. V., and Polyakov, A. Y., Mater. Sci. Forum 38–41, 1063 (1989).Google Scholar
27. Pajot, B., Clerjaud, B., Chevallier, J., Physica B 170, 371 (1991).Google Scholar
28. Clerjaud, B., Cote, D., and Naud, C., Phys. Rev. Lett. 58, 1755 (1987).Google Scholar
29. Pajot, B., Chevallier, J., Jalil, A., and Rose, B., Semicond. Sci. Technol. 4, 91 (1989).Google Scholar
30. Dautremont-Smith, W. C., Lopata, J., Pearton, S. J., Koszi, L. A., and Stavola, M., J. Appl. Phys. 66, 1993 (1989).Google Scholar
31. Briddon, P. R. and Jones, R., Physica B170, 413 (1991).CrossRefGoogle Scholar
32. Baurichter, A., Deicher, M., Deubler, S., Forkel, D., Meier, J., and Witthuhn, W., Mater. Sci. Forum 83–87, 593 (1992).Google Scholar
33. Buchwald, W. R., Johnson, N. M., and Trombetta, L. P., Appl. Phys. Lett. 50, 1007 (1987).Google Scholar
34. Street, R. A., Johnson, N. M., and Burnham, R. D., Mat. Res. Soc. Symp. Proc. 46, 333 (1985).Google Scholar
35. Weber, J., private communication.Google Scholar
36. Roos, G., Johnson, N. M., Herring, C., and Harris, J. S. Jr, Appl. Phys. Lett. 59, 461 (1991).Google Scholar
37. Leitch, A. W. R., Prescha, Th., and Stutzmann, M., Appl. Surf. Sci. 50, 390 (1991).Google Scholar
38. Sze, S. M., Physics of Semiconductor Devices, 2nd Edition (John Wiley & Sons, New York, 1981).Google Scholar
39. Leitch, A. W. R., Prescha, Th., and Weber, J., Phys. Rev. B 44, 1375 (1991).Google Scholar
40. Pearton, S. J., Abernathy, C. R., and Lopata, J., Appl. Phys. Lett. 59, 3571 (1991).Google Scholar
41. Chevallier, J., Machayekhi, B., Grattepain, C. M., Rahbi, R., and Theys, B., Phys. Rev. B 45, 8803 (1992).Google Scholar
42. Roos, G., Johnson, N. M., Herring, C., and Harris, J. S. Jr, this proceedings.Google Scholar
43. Johnson, N. M., Mat. Res. Soc. Symp. Proc. 69, 75 (1986).CrossRefGoogle Scholar
44. Herring, C. and Johnson, N. M., in Hydrogen in Semiconductors, eds. Pankove, J. I. and Johnson, N. M., Semiconductors and Semimetals Vol. 34 (Academic, San Diego, 1991), Chap. 10.Google Scholar
45. Szafranek, I., Bose, S. S., and Stillman, G. E., Appl. Phys. Lett. 55, 1205 (1989).Google Scholar
46. Tavendale, A. J., Pearton, S. J., Williams, A. A., and Alexiev, D., Appl. Phys. Lett. 56, 1457 (1990).Google Scholar
47. Mollwo, E., Zeitschrift für Physik 138, 478 (1954).Google Scholar
48. Tatarkiewicz, J., Breitschwerdt, A., Witowski, A. M., and Hartmann, H., Solid State Commun. 68, 1081 (1988).Google Scholar
49. Van de Walle, M. G., private communication.Google Scholar
50. Haase, M. A., Qiu, J., DePuydt, J. M., and Cheng, H., Appl. Phys. Lett. 59, 1272 (1991).Google Scholar
51. Pong, C., Johnson, N. M., Street, R. A., Walker, J., Feigelson, R. S., and De Matttei, R. C., unpuublished.Google Scholar
52. Johnson, N. M., Doland, C., Ponce, F., Walker, J., and Anderson, G., Physica B 170, 3 (1991).Google Scholar
53. Pajot, B., Newman, R. C., Murray, R., Jalil, A., Chevallier, J., and Azoulay, R., Phys. Rev. B 37, 4188 (1988).Google Scholar
54. Kozuch, D. M., Stavola, M., Pearton, S. J., Abernathy, C. R., and Lopata, J., Mat. Res. Soc. Symp. Proc. 163, 477 (1990).Google Scholar
55. Pajot, P., Jalil, A., Chevallier, J., and Azoulay, R., Semicond. Sci. Technol. 2, 305 (1987).Google Scholar
56. Clerjaud, B., Gendron, F., Krause, M., and Ulrici, W., Phys. Rev. Lett. 65, 1800 (1990).Google Scholar
57. Zavada, J. M., Jenkinson, H. A., Sarkis, R. G., and Wilson, R. G., J. Appl. Phys. 58, 3731 (1985).Google Scholar
58. Pearton, S. J., Deutremont-Smith, W. C., Chevallier, J., Tu, C. W., and Cummings, K. D., J. Appl. Phys. 59, 2821 (1986).Google Scholar
59. Rahbi, R., Mathiot, D., Chevallier, J., Grattepain, C., and Razeghi, M., Physica B 170, 135 (1991).Google Scholar
60. Cho, H. Y., Min, S.-K., Chang, K. J., and Lee, C., Phys. Rev. B 44, 13779 (1991).Google Scholar
61. Pearton, S. J., Deutremont-Smith, W. C., Tu, C. W., Nabity, J. C., Swaminathan, V., Stavola, M., and Chevallier, J., IOP Conf. Ser. 83, 289 (1987).Google Scholar
62. Pfeiffer, W., Deicher, M., Keller, R., Magerle, R., Recknagel, E., Skudlik, H., Wiehert, Th., Wolf, H., Forkel, D., Moriya, N., and Kalish, R., Appl. Phys. Lett. 58, 1751 (1991).Google Scholar
63. Stavola, M., Pearton, S. J., Lopata, J., Abernathy, C. R., and Bergman, K., Phys. Rev. B 39, 8051 (1989).CrossRefGoogle Scholar
64. Clerjaud, B., Cote, D., Gendron, F., Hahn, W.-S., Krause, M., Porte, C., and Ulrici, W., Mater. Sci. Forum 83–87, 563 (1992).Google Scholar
65. Kozuch, D. M., Stavola, M., Pearton, S. J., and Lopata, J., Bull. Amer. Phys. Soc., Vol. 37, No. 1, 195 (1992).Google Scholar