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Hydrogen in a-Si:H Deposited by 55 kHz PECVD

Published online by Cambridge University Press:  10 February 2011

B. G. Budaguan  and
A. A. Aivazov
B. G. Budaguan
Affiliation:
Institute of Electronic Technology, 103498 Moscow, Russia, [email protected]
A. A. Aivazov
Affiliation:
UniSi Corp. 401, National Av, Mountain View, CA, 94043
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Abstract

In this work the mechanism of hydrogen incorporation and structural stability of a-Si:H films deposited by LF 55 kHz glow discharge in a wide range of technological parameters have been investigated. The analysis of plasma emission spectra and microstructure of films measured by IR spectroscopy and atomic force microscopy were carried out. It was shown that hydrogen desorption controls the growth rate in a wide range of substrate temperature (40–325°C ) and at low values of LF power (50–200W). At the same time the abnormal increase of hydrogen content due to ion-molecule surface reactions with the increase of substrate temperature was observed. The kinetics of hydrogen diffusion and thermodynamics of defect formation in a-SiH films were determined from modeling of differential scanning calorimetry data. It is concluded that the mechanism of hydrogen incorporation leads to formation of strong Sill bonds in the material bulk and to increase of structural stability with the increase of substrate temperature despite of the increase of hydrogen content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 387
Copyright
Copyright © Materials Research Society 1998

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