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Hydrogen Dynamics in a-Si:H

Published online by Cambridge University Press:  01 January 1993

Paulo V. Santos
Paulo V. Santos*
Affiliation:
Max-Planck-Institut für Festkörperforschung,W-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

The interaction between electronic carriers and hydrogen migration in a-Si:H was investigated by diffusion experiments in the intrinsic (i−) layer of p-i-n a-Si:H photo-diodes. The carrier concentration in the i-layer was controlled by varying the bias applied to the devices. Hydrogen migration (i) is enhanced when the carrier population is increased by illumination and (ii) is suppressed when it is reduced below the thermal equilibrium value by the application of a reverse bias to the diodes. The effect is attributed to the dependence on carrier density of the dissociation rate of hydrogen from Si-H bonds into the diffusion path consisting of interstitial sites. In addition, the migration length in the diffusion path increases under reverse bias. The enhanced migration is associated with a decrease in the effective density of traps for hydrogen in a carrier-depleted layer. Possible mechanisms for the interaction between hydrogen migration, carriers and defects are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 267
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81 (1978).Google Scholar
2. Dersch, H., Stuke, J., and Beichler, J., Appl. Phys. Lett. 38, 456 (1980).Google Scholar
3. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
4. Street, R.A.,Tsai, C.C., Kakalios, J., and Jackson, W.B., Phil. Mag. 56, 305 (1987).Google Scholar
5. Santos, P.V., Johnson, N.M., and Street, R.A., Phys. Rev. Lett. 67, 2686 (1991).Google Scholar
6. Santos, P.V. and Jackson, W.B., Phys. Rev. B46, 4595 (1992).Google Scholar
7. Santos, P.V. and Johnson, N.M., Appl. Phys. Lett. 53, 1181 (1993).Google Scholar
8. Santos, P. V., Johnson, N.M., Street, R.A., Hack, M., Thompson, R., and Tsai, C.C., in print.Google Scholar
9. Jackson, W.B. and Tsai, C.C., Phys. Rev. B45, 6564 (1992).Google Scholar
10. Zhang, S.B., Jackson, W.B., and Chadi, D.J., Phys. Rev. Lett. 65, 2575 (1990).Google Scholar
11. Herring, C. and Johnson, N.M., in Hydrogen in Semiconductors, Semiconductors and Semi- metals, Ed. By Pankove, J. and Johnson, N.M., (Academic, San Diego, 1991), Vol. 34, p. 113.Google Scholar
12. Tuck, B., Introduction to Diffusion in Semiconductors (Peregrinus, Salisbury, 1974).Google Scholar
13. Beyer, W. and Wagner, H., J. Appl. Phys 53,8745 (1982).Google Scholar
14. Branz, H.M., Asher, S.E., and Nelson, B.P., to appear in Amorphous Silicon Technology-1992 Mat. Res. Symp. Vol. 219, Ed. by Madam, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C., and LeComber, P.G., (Material Research Society,Pittsburgh 1992.Google Scholar
15. Zafar, S. and Schiff, E., J. Non-Cryst. Solids 114,618 (1989).Google Scholar
16. Stutzmann, M., Phil. Mag. B56, 63 (1987).Google Scholar
17. Abeles, B., Yang, L., Leta, D., and Majkrzak, C., J. Non-Cryst. Solids 97 & 98, 353 (1987).Google Scholar