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Hydrogen diffusion in polycrystalline boron doped and undoped diamond.

Published online by Cambridge University Press:  17 March 2011

D. Ballutaud ,
A. Boutry-Forveille ,
J.-M. Laroche ,
N. Simon ,
H. Girard ,
M. Herlem  and
A. Etcheberry
D. Ballutaud
Affiliation:
CNRS-LPSC, 1 place Aristide Briand, 92195 Meudon cedex, France
A. Boutry-Forveille
Affiliation:
CNRS-LPSC, 1 place Aristide Briand, 92195 Meudon cedex, France
J.-M. Laroche
Affiliation:
CNRS-LPSC, 1 place Aristide Briand, 92195 Meudon cedex, France
N. Simon
Affiliation:
Institut Lavoisier, Université de Versailles-St-Quentin en Yvelines, 78035 Versailles cedex, France
H. Girard
Affiliation:
Institut Lavoisier, Université de Versailles-St-Quentin en Yvelines, 78035 Versailles cedex, France
M. Herlem
Affiliation:
Institut Lavoisier, Université de Versailles-St-Quentin en Yvelines, 78035 Versailles cedex, France
A. Etcheberry
Affiliation:
Institut Lavoisier, Université de Versailles-St-Quentin en Yvelines, 78035 Versailles cedex, France
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Abstract

Hydrogen (deuterium used as tracer) diffusion experiments were performed on undoped and boron doped diamond films ([B] = 1019and 1020 cm−3) grown by plasma CVD or hot-filament assisted CVD. The samples were exposed either to a radiofrequency plasma or a microwave plasma at different temperatures between 400°C and 900°C. The deuterium profiles were analysed by secondary ion mass spectrometry (SIMS). The deuterium diffusion was explained mainly in term of trapping on intergranular defects. The passivation of boron acceptors, by B-D complex formation in the deuterium diffused superficial layers of the diamond films, was followed by electrochemical and mercury probe capacitance measurements. The results suggest a strong decrease of the free carrier density, which is in accordance with passivation of free carriers by deuterium trapping on dopant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H8.3
Copyright
Copyright © Materials Research Society 2004

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References

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