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Hydrogen Diffusion in Boron-Doped Silicon

Published online by Cambridge University Press:  25 February 2011

C.P. Herrero ,
M. Stutzmann  and
A. Breitschwerdt
C.P. Herrero
Affiliation:
Instituto de Ciencia de Materiales, Serrano 115 dpdo, 28006 Madrid, Spain
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany
A. Breitschwerdt
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Infrared reflectance spectroscopy is employed to obtain hydrogen depth profiles in boron-doped silicon, hydrogenated under various plasma conditions. From the obtained profiles, H-diffusion coefficients are calculated for different temperatures and dopant concentrations. Our results are interpreted by assuming that diffusion in the bulk is limited by trapping at the acceptor sites. A binding energy of 0.6 eV is deduced for B-H pairs. We also analyze the influence of a bias applied to the sample on the hydrogenation process. This sample bias can favor or completely hinder the diffusion of hydrogen into the silicon bulk. Also, a surface oxide layer can drastically inhibit the hydrogen in-diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 395
Copyright
Copyright © Materials Research Society 1990

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