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Hydrogen Diffusion in Boron Doped Diamond: Evidence of Hydrogen-Boron Interactions

Published online by Cambridge University Press:  10 February 2011

J. Chevallier
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A.Briand, 92195 Meudon Cedex, France
B. Theys
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A.Briand, 92195 Meudon Cedex, France
C. Grattepain
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place A.Briand, 92195 Meudon Cedex, France
A. Deneuville
Affiliation:
Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, 38042 Grenoble, France
E. Gheeraert
Affiliation:
Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, 38042 Grenoble, France
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Abstract

Deuterium diffusion has been investigated in boron doped diamond as a function of the diffusion temperature and the boron concentration. The results show that, up to 480°C, hydrogen diffusion is limited by the boron concentration with a diffusion activation energy of 0.35 eV for [B] = 5×1019 cm−3. This first experimental evidence of deuterium-boron interactions in diamond is interpreted as the result of hydrogen ionization and diffusion of fairly mobile protons which form pairs with negatively charged boron acceptors

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. McNamara Rutledge, K.M. and Gleason, K.K., Chem. Vap. Deposition 2, 37 (1996) and references therein.Google Scholar
2. Shirafuji, J. and Sugino, T., Diamond and Related Materials, 5, 706 (1996).Google Scholar
3. Hayashi, K., Yamanaka, S., Watanabe, H., Sekiguchi, T., Okushi, H. and Kajimura, K., J. Appl. Phys. 81, 744 (1997).Google Scholar
4. Himpsel, F.J., Knapp, J.A., Van Vechten, J.A. and Eastman, D.E., Phys. Rev. B 20, 624 (1979).Google Scholar
5. Malta, D.P., Posthill, J.B., Humphreys, T.P., Thomas, R.E., Fountain, G.G., Rudder, R.A., Hudson, G.C., Mantini, M.J. and Markunas, R.J., Appl. Phys. Lett. 64, 1929 (1994).Google Scholar
6. Chevallier, J., Defect and Diffusion Forum, 131–132, 9 (1996).Google Scholar
7. Ulyashin, A.G., Gelfand, R.B., Shlopak, N.V., Zaitsev, A.M., Denisenko, A.V. and Melnikov, A.A., Diamond and Related Materials 2, 1516 (1993).Google Scholar
8. Mehandru, S.P. and Anderson, A.B., J. Mater. Res. 9, 383 (1994).Google Scholar
9. Breuer, S.J. and Briddon, P.R., Phys. Rev. B 49, 10332 (1994).Google Scholar
10. Grot, S.A., Gildenblat, G.SI., Hatfield, C.W., Wronski, C.R., Badzian, A.R., Badzian, T. and Messier, R., IEEE Electron Device Lett. 11, 100 (1990).Google Scholar
11. Gheeraert, E., Deneuville, A., Mambou, J. and Ribot, P., Shallow-level Centers in Semiconductors (Amsterdam, July 1996), 159, eds. Ammerlaan, C.A.J. and Pajot, B., 1997 World Scientific Publishing Company.Google Scholar
12. Johnson, N.M. and Moyer, M.D., Appl. Phys. Lett. 46, 787 (1985).Google Scholar
13. Tavendale, A.J., Williams, A.A., Alexiev, D. and Pearton, S.J., Mat. Res. Soc. Symp. Proc. 59, 469 (1986).Google Scholar
14. Popovici, G., Wilson, R.G., Sung, T., Prelas, M.A. and Khasawinah, S., J. Appl. Phys. 77, 5103 (1995).Google Scholar
15. Landstrass, M.I. and Ravi, K.V., Appl. Phys. Lett. 55, 1391 (1989).Google Scholar
16. Estreicher, S.K., Roberson, M.A. and Maric, Dj.M., Phys. Rev. B, 50, 17018 (1994).Google Scholar
17. Johnson, N.M., Hydrogen in Semiconductors (Semiconductors and Semimetals, vol.34) ed. Pankove, J.I. and Johnson, N.M. (Academic Press, San Diego, 1991) p. 113.Google Scholar
18. Briddon, P., Jones, R. and Lister, G.M.S., J. Phys. C 21, L1207 (1988).Google Scholar
19. DeAk, P., Snyder, L.C. and Corbett, J.W., Phys. Rev. B 37, 6887 (1988).Google Scholar
20. Chang, K.J. and Chadi, D.J., Phys. Rev. Lett. 62, 937 (1989).Google Scholar
21. Murakami, K., Fukata, N., Sasaki, S., Ishioka, K., Kitajima, M., Fujimura, S., Kikuchi, J. and Haneda, H., Phys. Rev. Lett. 77, 3161 (1996).Google Scholar
22. Holbech, J.D., Bech-Nielsen, B., Jones, R., Sitch, P. and Oberg, S., Phys. Rev. Lett. 71, 875 (1993).Google Scholar