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Hydrogen Diffusion and Solubility in A-Si:H

Published online by Cambridge University Press:  16 February 2011

Wolfhard Beyer  and
Heribert Wagner
Wolfhard Beyer
Affiliation:
ISI-PV, Forschungszentrum Juelich, D-52425 Juelich, Germany
Heribert Wagner
Affiliation:
ISI-PV, Forschungszentrum Juelich, D-52425 Juelich, Germany
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Abstract

For plasma-grown a-Si:H films deposited at substrate temperatures between 100 and 580°C the diffusion of hydrogen was studied by SIMS profiling of H/D interdiffusion and by hydrogen evolution. The solubility for deuterium penetration into a-Si:H is found to be limited by the hydrogen concentration. Diffusion prefactors and activation energies evaluated for a constant diffusion length follow a Meyer-Neldel rule. The diffusion free energies obtained by interdiffusion and evolution experiments agree closely up to about 400°C but disagree at higher substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 323
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Beyer, W., Herion, J., Wagner, H. and Zastrow, U., Philos. Mag. B 63, 269 (1991).CrossRefGoogle Scholar
2. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81 (1978).CrossRefGoogle Scholar
3. Beyer, W., Herion, J., Mell, H. and Wagner, H., in Amorphous Silicon Technology, edited by Madan, A., Thompson, M.J., Taylor, P.C., LeComber, P.G. and Hamakawa, Y. (Mater. Res. Soc. Proc. 118, Pittsburgh, PA, 1988) p. 291.Google Scholar
4. Branz, H.M., Asher, S., Nelson, B.P. and Kemp, M., in Amorphous Silicon Technology-1993. edited by Schiff, E.A., Thompson, M.J., Madan, A., Tanaka, K. and LeComber, P.G. (Mater. Res. Soc. Proc. 297, Pittsburgh, PA, 1993) p. 279.Google Scholar
5. Street, R.A., Tsai, C.C., Kakalios, J. and Jackson, W.B., Philos. Mag. B 56 (1987) 305.Google Scholar
6. Nickel, N. H., Jackson, W. B. and Tsai, C.C., in Amorphous Silicon Technology-1993. edited by Schiff, E. A., Thompson, M.J., Madan, A., Tanaka, K. and LeComber, P.G. (Mater. Res. Soc. Proc. 297, Pittsburgh, PA, 1993) p. 261.Google Scholar
7. Shinar, J., Shinar, R., Wu, X.X., Mitra, S. and Girvan, R.F., Phys. Rev. B 43, 1631 (1991).Google Scholar
8. Tang, X.M., Weber, J., Baer, Y. and Finger, F., Phys. Rev. B 41, 7945 (1990).Google Scholar
9. Beyer, W. and Wagner, H., J. Non-Cryst. Solids 59–60, 161 (1983).Google Scholar
10. Beyer, W., Herion, J. and Wagner, H., J. Non-Cryst. Solids 114, 217 (1989).Google Scholar
11. Jackson, W. B., Phys. Rev. B 38, 3595 (1988).Google Scholar
12. Khait, Y.L., Weil, R., Beserman, R., Beyer, W., Wagner, H., Phys. Rev. B 42, 9000 (1990).Google Scholar
13. Beyer, W. and Wagner, H., J. Appl. Phys. 53, 8745 (1982).Google Scholar