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Hydrogen Diffusion and Complex Formation in Silicon

Published online by Cambridge University Press:  25 February 2011

J.T. Borenstein ,
D. Tulchinski  and
J.W. Corbett
J.T. Borenstein
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, MA 01821
D. Tulchinski
Affiliation:
Physics Department, SUNY at Albany, Albany, NY 12222.
J.W. Corbett
Affiliation:
Physics Department, SUNY at Albany, Albany, NY 12222.
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Abstract

The kinetics of hydrogen diffusion and complex formation in crystalline silicon are investigated using a model previously developed to explain the influence of dopant type and concentration on observed deuterium profiles in silicon. The predictions of the model have been shown to be in close agreement with recent SIMS profiles of deuterated FZ-Si crystals, with the in-diffusion process dominated by trapping at impurity sites and by the formation of immobile hydrogen molecules.

Previous studies have treated the surface concentration of hydrogen and the capture radii of hydrogen at complexes as free kinetic parameters. We present an analytic relationship between the diffusion coefficient D of neutral hydrogen and both the hydrogen surface concentration and the capture radius for molecule formation. The consequences of fixing D at the known high-temperature value for the diffusion coefficient in the model are determined. The existence of this analytic relation reduces the number of free parameters in the kinetic model and leads to an improved understanding of hydrogen reactions in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 633
Copyright
Copyright © Materials Research Society 1990

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