Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-08T05:14:00.894Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Diffusion and Complex Formation in Silicon

Published online by Cambridge University Press:  25 February 2011

J.T. Borenstein ,
D. Tulchinski  and
J.W. Corbett
J.T. Borenstein
Affiliation:
Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, MA 01821
D. Tulchinski
Affiliation:
Physics Department, SUNY at Albany, Albany, NY 12222.
J.W. Corbett
Affiliation:
Physics Department, SUNY at Albany, Albany, NY 12222.
Get access

Abstract

The kinetics of hydrogen diffusion and complex formation in crystalline silicon are investigated using a model previously developed to explain the influence of dopant type and concentration on observed deuterium profiles in silicon. The predictions of the model have been shown to be in close agreement with recent SIMS profiles of deuterated FZ-Si crystals, with the in-diffusion process dominated by trapping at impurity sites and by the formation of immobile hydrogen molecules.

Previous studies have treated the surface concentration of hydrogen and the capture radii of hydrogen at complexes as free kinetic parameters. We present an analytic relationship between the diffusion coefficient D of neutral hydrogen and both the hydrogen surface concentration and the capture radius for molecule formation. The consequences of fixing D at the known high-temperature value for the diffusion coefficient in the model are determined. The existence of this analytic relation reduces the number of free parameters in the kinetic model and leads to an improved understanding of hydrogen reactions in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 633
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pearton, S.J., Corbett, J.W. and Shi, T.S., Appl. Phys. A 43, 153 (1987).Google Scholar
2 Deak, P., Snyder, L.C. and Corbett, J.W., Phys. Rev. B 37, 6887 (1988).Google Scholar
3 Pearton, S.J., Stavola, M. and Corbett, J.W., Rad. Eff. and Defects in Solids 111–112 [1–2], 323 (1989).Google Scholar
4 Buda, F., Chiarotti, G.L., Car, R. and Parrinello, M., Phys. Rev. Lett. 63, 294 (1989).Google Scholar
5 Van Wieringen, A. and Warmoltz, N., Physica 22, 849 (1956).Google Scholar
6 Borenstein, J.T., Angell, D. and Corbett, J.W., Mat. Res. Soc. Proc. 138, 209 (1989).Google Scholar
7 Seager, C.H. and Anderson, R.A., in Ref. 6, p. 197.Google Scholar
8 Capizzi, M. and Mittiga, A., Appl. Phys. Lett. 50, 918 (1987).Google Scholar
9 Mathiot, D., Phys. Rev. B 40, 5867 (1989).Google Scholar
10 Kalejs, J.P. and Rajendran, S., Appl. Phys. Lett., in press.Google Scholar
11 Corbett, J.W., Lindstrom, J.L., Pearton, S.J. and Tavendale, A.J., Solar Cells 24, 127 (1988).Google Scholar
12 Van de Walle, C.G., Bar-Yam, Y., and Pantelides, S.T., Phys. Rev. Lett. 60 2761 (1988).Google Scholar