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Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

Published online by Cambridge University Press:  17 March 2011

C. Y. Wang ,
E. H. Lim ,
H. Liu ,
J. L. Sudijono ,
T. C. Ang ,
V. Y. Vassiliev  and
J. Z. Zheng
C. Y. Wang
Affiliation:
Process Integration, Chartered Silicon Partner Pte Ltd Email:[email protected]
E. H. Lim
Affiliation:
2R&D, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, 738406, Singapore
H. Liu
Affiliation:
2R&D, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, 738406, Singapore
J. L. Sudijono
Affiliation:
2R&D, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, 738406, Singapore
T. C. Ang
Affiliation:
2R&D, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, 738406, Singapore
V. Y. Vassiliev
Affiliation:
2R&D, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, 738406, Singapore
J. Z. Zheng
Affiliation:
2R&D, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, 738406, Singapore
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Abstract

In this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A8.5
Copyright
Copyright © Materials Research Society 2001

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References

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