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Hydrogen Complexes and their Vibrations in Proton and Deuteron Implanted Inp: Theory and Experiment

Published online by Cambridge University Press:  01 January 1992

D. N. Talwar ,
D. W. Fischer ,
M. O. Manasreh  and
G. Matous
D. N. Talwar
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELRA), Wright-Patterson AFB, OH 45433-6543 Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705-1087
D. W. Fischer
Affiliation:
Wright Laboratory, Materials Directorate (WL/MLPO), Wright-Patterson AFB, OH 45433-6533
M. O. Manasreh
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELRA), Wright-Patterson AFB, OH 45433-6543
G. Matous
Affiliation:
Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705-1087
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Abstract

By using a Van de Graaff accelerator we have implanted 2 MeV protons and deuterons into InP samples. These implanted samples were annealed in 50 °C increments in the 200 to 600 °C temperature range for 30 minutes each and then measured by the infrared absorption spectroscopy. A group of four different local vibrational mode absorption lines is observed, each of which arises from the hydrogen-phosphorus stretching vibration with different defects or impurities at nearest-neighbor sites. Each mode exhibits an annealing behavior which is different than any of the other absorption lines. The annealing results are shown and discussed in terms of Green's function calculations of the defects responsible for the two absorption lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 291: Symposium O – Materials Theory and Modeling , 1992 , 561
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Pearton, S. J., Corbett, J. W., and Shi, T. S., Appl. Phys. A 43, 153 (1987).Google Scholar
2 Hydrogen in Semiconductors, “Semiconductors and Semimetals,” Vol. 34, edited by Pankove, J. I. and Johnson, N. M. (Academic, San Diego, 1991). This book contains many chapters by a number of authors which provide excellent overviews of the behavior of hydrogen in a variety of elemental and compound semiconductors.Google Scholar
3 Fischer, D. W., Manasreh, M. O., and Matous, G., J. Appl. Physics 71, 4805, (1992); Fischer, D. W., Manasreh, M. O., Talwar, D. N., and Matous, G., J. Appl. Phys. 73, (January, 1993).Google Scholar
4 Talwar, D. N., Fischer, D. W., Manasreh, M. O. and Matous, G. (unpublished).Google Scholar
5 Tatarkiewicz, J., Breitschwerdt, A., and Witowski, A., Phys. Rev. B39, 3889 (1989).Google Scholar
6 Tatarkiewicz, J., Witowski, A., and Jahne, E., Phys. Stat. Sol. bl42, K101 (1987).Google Scholar
7 Riede, V., Neumann, H., Sobotta, H., Ascheron, C., and Novikov, B. V., Solid State Commun. 61, 113 (1987).Google Scholar
8 Talwar, D. N., Vandevyver, M., Bajaj, K. K., and Theis, W. M., Phys. Rev. B33, 8525 (1986).Google Scholar
9 Omelyanovskii, E. M., Pakhomov, A. V., and Polyakov, A. Ya., Sov. Phys. Semiconductor 21, 514 (1987).Google Scholar
10 Cho, H. Y., Kim, E. K. and Min, S., Appl. Phys. Letters 53, 856 (1988)Google Scholar