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Hydrogen Bonding in a-Si:H Prepared by Remote Hydrogen Plasma Deposition

Published online by Cambridge University Press:  25 February 2011

S. E. Ready ,
J. B. Boyce ,
N. M. Johnson ,
J. Walker  and
K. S. Stevens
S. E. Ready
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. Walker
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
K. S. Stevens
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Nuclear magnetic resonance (NMR) has provided essential information on the local atomic bonding and microstructure of hydrogen in hydrogenated amorphous silicon (a-Si:H). Here we describe results from NMR and Raman spectroscopy on the hydrogen distribution and bonding in a-Si:H prepared by remote hydrogen plasma (RHP) deposition and contrast the results with those from a-Si:H prepared by conventional glow discharge (GD) deposition. The films prepared by the two techniques have similar H bonding except for the presence in the RHP sample of about 1 atomic % molecular hydrogen, a factor of ten higher than in GD material. For RHP samples prepared from a deuterium plasma rather than a hydrogen plasma, substantial differences in the hydrogen NMR spectra, hydrogen spin lattice relaxation time and Raman spectra are observed. The hydrogen which necessarily originates from the silane has a dramatically altered spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 127
Copyright
Copyright © Materials Research Society 1990

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References

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